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Memory window in ferroelectric PVDF copolymer gate integrated MOSFET devices for nondestructive readout memory application
Published online by Cambridge University Press: 01 February 2011
Abstract
Metal-Ferroelectric-Oxide-Si (MFEOS) field effect transistor (FET) with ferroelectric polyvinylidene fluoride trifluoroethylene copolymer (PVDF-TrFE) gate for nonvolatile memory application is demonstrated. Memory window ascribed to ferroelectric polarization switching has been quantified by shift of threshold voltage are ~ 4-5V. Non saturating IDS is due to free ionic polarization field. IDS-VDS characteristics of functional FET are realized after AC poling.
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- Copyright © Materials Research Society 2007