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Mapping of Defects in Metal-Semiconductor-Metal (MSM) Detectors in Hg1−xCdxTe by Nuclear Microprobe

Published online by Cambridge University Press:  21 February 2011

Patrick W. Leech ,
Sean P. Dooley  and
David N. Jamieson
Patrick W. Leech
Affiliation:
Telecom Australia Research Laboratories, Clayton, 3168, Victoria, Australia
Sean P. Dooley
Affiliation:
MARC, School of Physics, University of Melbourne, Parkville, 3052, Victoria, Australia
David N. Jamieson
Affiliation:
MARC, School of Physics, University of Melbourne, Parkville, 3052, Victoria, Australia
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Abstract

The incidence of compositional and structural inhomogenieties in MSM detectors based on Hg1−xCdxTe/GaAs and Hg1−xCdxTe/GaAs/Si has been examined by nuclear microprobe. With a 2 MeV He+ beam focussed to ≥5 μm, the microprobe has demonstrated the capability for RBS channelling in the active region of a Hg1−xCdxTe device and the imaging of defects by Channelling Contrast Microscopy (CCM). A series of linear growth defects in some Hg1−xCdxTe devices were identified using CCM. The channelling RBS spectra from these regions have shown an increase in χmin compared with the surrounding high quality crystal. The occurence of these defects was associated with a degradation in the performance of affected devices in an array. RBS spectra have also revealed the presence of an anomalous CdTe layer, correlating with a significant reduction in dark current and increase in breakdown voltage of these devices. RBS channelling of individual devices has identified differences in χmin between arrays which were prepared under equivalent conditions of growth and processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 411
Copyright
Copyright © Materials Research Society 1993

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References

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