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Low Temperature Si Homoepitaxy: Effects of Impurities on Microstructure
Published online by Cambridge University Press: 15 February 2011
Abstract
Hydrogen is shown to influence the surface roughness during low temperature Si MBE. Small partial pressures (1 × 10-7 Torr) of deuterium, introduced during Si growth at 310°C, are sufficient to increase the surface width to ∼30 Å before breakdown of epitaxy. This work is consistent with previous studies of the dependence of epitaxial thickness on hydrogen partial pressure and supports a model in which surface roughening leads to the breakdown of epitaxy.
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- Copyright © Materials Research Society 1993