Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-25T02:28:01.390Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Temperature Fabrication of Microcrystalline Silicon Germanium Films by RF Reactive Magnetron Sputtering

Published online by Cambridge University Press:  01 February 2011

Isao Nakamura ,
Toru Ajiki  and
Masao Isomura
Isao Nakamura
Affiliation:
[email protected], Tokai university, Electrical & Electronic Engineering, 117 Kitakaname, Hiratsuka, Kanagawa, N/A, 259-1292, Japan
Toru Ajiki
Affiliation:
[email protected], Tokai university, Department of Electrical & Electronic Engineering, 1117 Kitakaname, Hiratsuka, Kanagawa, N/A, 259-1292, Japan
Masao Isomura
Affiliation:
[email protected], Tokai university, Department of Electrical & Electronic Engineering, 1117 Kitakaname, Hiratsuka, Kanagawa, N/A, 259-1292, Japan
Get access

Abstract

Microcrystalline silicon germanium films (μc-SiGe) were fabricated on Corning #7059 glass substrates by the RF reactive magnetron sputtering method. The μc-SiGe films with Ge fraction of 0.7-0.8 could be crystallized at of 200 °C by H2 introduction into the sputtering gases. The absorption coefficients of the films decrease in long wavelength region corresponding to the photon energies below the energy gap by the decrease in the substrate temperature and become close to those of single crystal Si0.25Ge0.75. The dark conductivities show lower values of 10-7 S/cm at 200 °C and 300 °C with H2 introduction. Besides, the photosensitivities are observed in these samples. These results indicate that the H2 introduction into the sputtering gas has two important effects to decrease the crystallization temperature of the μc-SiGe and to improve the film properties by reducing the dangling bond defects.

Keywords

sputteringSiGe
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A13-05
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Yamamoto, K., Suzuki, T., Yoshimi, M. and Nakajima, A., Proc. of the 25th IEEE PV Spec. Conf., 1428 (1996).Google Scholar
2. Meier, J., Fluckiger, R., Keppner, H. and Shah, A., Appl. Phys. Lett., 65, 860 (1994).Google Scholar
3. Isomura, M., Nakahata, K., Shima, M., Taira, S., Wakisaka, K., Tanaka, M. and Kiyama, S., Sol. Energy Mater. & Sol. Cells, 74, 519 (2002).Google Scholar
4. Ogata, K., Niwa, A., Matsui, T., Isomura, M. and Kondo, M., Technical Digest of the 15th PVSEC, 768 (2005).Google Scholar
5. Nakamura, I., Toru, A., Abe, H., Hoshi, D. and Isomura, M., VACUUM, (2006) (in press).Google Scholar
6. Hishikawa, Y., Nakamura, N., Tsuda, S., Nakano, S., Kishi, Y. and Kuwano, Y., Jpn. J. Appl. Phys, 30, 1008 (1991).Google Scholar
7. Maiti, C K, Armstrong, G A, APPLICATION OF SILICON-GERMANIUM HETEROSTRUCTURE DEVICE, (Institute of Physical Publishing, 2001), p. 321.Google Scholar