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Localized Lifetime Control In Silicon Bipolar Power Devices By Voids Induced By He Ion Implantation
Published online by Cambridge University Press: 10 February 2011
Abstract
Localized lifetime control in silicon bipolar devices is presented and discussed. It was achieved by formation of a void layer by He ion implantation. The void formation is reviewed and the void properties are described and carefully considered. Simulations demonstrate the advantages of using localized lifetime control, while the innovative method is applied to fabrication of high speed Insulated Gate Bipolar Transistors.
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- Copyright © Materials Research Society 1998