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Layer-by-Layer Sputtering and Ultrathin Ion Implantation by Low-Energy Grazing Ion Bombardment
Published online by Cambridge University Press: 26 February 2011
Abstract
The ion sputtering and implantation into GaAs(001) surface at 1-5 keV Se+ grazing ion bombardment have been investigated by computer simulation.The azimuth angular dependencies of sputtering and penetration yield at grazing incidence have been calculated. It was observed that these dependencies correlate the crystal orientation. The depth distributions of 1-5 keV Se ions implanted into GaAs(001) for several azimuth angles of incidence have been presented.
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