Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-28T13:01:07.288Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser-Patterned Blue-Green SiC LED

Published online by Cambridge University Press:  01 February 2011

Sachin Madhukar Bet ,
Nathaniel R Quick  and
Aravinda Kar
Sachin Madhukar Bet
Affiliation:
[email protected], University of Central Florida, MMAE/ CREOL, CREOL, Building 53,, 4000 Central Florida Blvd., Orlando, Florida, 32826, United States, 407-823-6847, 407-823-6880
Nathaniel R Quick
Affiliation:
[email protected], AppliCote Associates, LLC, 1445 Dolgner Place, Suite 23, Sanford, FL, 32771, United States
Aravinda Kar
Affiliation:
[email protected], College of Optics and Photonics (COP), Center for Research and Education in Optics and lasers (CREOL), UCF, Orlando, FL, 32816, United States
Get access

Abstract

Laser direct writing and doping has already been successfully demonstrated for fabrication of PIN diodes, Ohmic and Schottky contacts and other optical structures in silicon carbide (SiC). Although SiC is an indirect bandgap semiconductor a SiC green light emitting diode (LED) has been recently shown to perform better than a GaN green LED. This observation is primarily due to 1) a simple device structure in SiC as opposed to the multilayered structure in GaN and other high bandgap semiconductor compounds and 2) high thermal conductivity. This initial phase focuses on the fabrication of reference SiC LED's to baseline this novel laser direct writing and doping process.

6H:SiC (n-type) wafer samples were used for fabrication of LED's. A Nd:YAG laser (1064nm wavelength) was used in continuous wave mode as well as pulsed mode for doping. Doping process iterations were carried out to obtain a uniform doped layer. Two different techniques were employed for patterning: 1) top doping where the incident laser beam assists in doping on the top surface and 2) bottom doping where the bottom surface is doped using the same top incident laser beam. Different structures were synthesized using these two doping techniques. P-type dopants such as boron (in powder form) and aluminum (metalorganic compound tri-methyl aluminum) and n-type dopant (pure nitrogen gas) were used. The doped structures were characterized for I-V characteristics, C-V characteristics and electroluminescence.

Electroluminescence (EL) spectrum of the doped samples showed the output in the range of blue to blue green for different samples and the different doped structures. The feasibility of wavelength tuning using nanostructure patterning has also been explored.

Keywords

laser-induced reactiondopantoptoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B10-01
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1]. Lee, K. M., Dang, L. S., Watkins, G. D., and Choyke, W. J., Physical review B, Vol. 32, pp. 2273, (1985).Google Scholar
[2]. Ng, Wai Lek, Lourenco, M. A., Gwilliam, R. M., Ledain, S., Shao, G. and Homewood, K. P., Nature, Vol. 410, Issue 8, (2001)Google Scholar
[3]. Harris, G. L., Emis Data Review Series No. 13, Inspec Publication, (1995)Google Scholar
[4]. Vlaskina, S.I., Semiconductor Physics, Quantum Electronics and Optoelectronics, Vol. 5, pp. 71–75, (2002)Google Scholar
[5]. Edmond, J., Kong, H., Suvorov, A., Waltz, D. and Carter, C. Jr, Phys. Stat. Sol. (a), Vol. 162, pp. 481–491, 1997.Google Scholar
[6]. Dmitriev, V. A., Morozenko, Y. V., Popov, I. V., Surorov, A. V., Syrkin, A. L., Chelnokov, V. E., Soviet Technical Physics Letters, Vol. 12, Issue 5, pp 221–222, 1986.Google Scholar
[7]. Dmitriev, V. A., Kogan, L. M., Morozenko, Y. V., Tsarenkov, B. V., Chelnokov, V. E. and Cherenkov, A. D., Soviet Physical Semiconductors, Vol. 23, Issue 1, pp 23–25, 1989.Google Scholar
[8]. Vishnevskaya, B. I., Dmitriev, V. A., Logan, L. M., Morozenko, Y. V., V. E. Chelnokov and Cherenkov, A. D., Soviet Technical Physics Letters, Vol. 16, Issue 12, pp 908–909, (1990)Google Scholar
[9]. Hoffmann, L., Ziegler, G., Theis, D. and Weyrich, C., Journal of Applied Physics, Vol. 53, Issue 10, pp 6962–6967, 1982.Google Scholar
[10]. Ikeda, M., Hayakawa, T., Yamagiwa, S., Matsunami, H., and Tanaka, T., Journal of Applied Physics, Vol. 50, Issue 12, pp 8215–8225, 1979.Google Scholar
[11]. Salama, I.A., Quick, N.R. and Kar, A., Laser Doping of Silicon Carbide Substrates, Journal of Electronic Materials, Vol. 31, pp. 200–208, (2002)Google Scholar
[12]. Krasnov, Y. S., Kmita, T. G., Ryzhikov, I. V., Pavlichenko, V. I., Sergeev, O. T., and Suleimanov, Y. M., Soviet Physics-Solid State, Vol. 7, Issue 4, pp 905–910, (1969)Google Scholar
[13]. Pavlichenko, V. I. and Ryshikov, I. V., Soviet Physics-Solid State, Vol. 10, Issue 12, pp 2977–2979, (1969)Google Scholar
[14]. Kholuyanov, G. F., Soviet Physics-Solid State, Vol. 7, Issue 11, pp 2620–2624, (1969)Google Scholar