Hostname: page-component-788cddb947-r7bls Total loading time: 0 Render date: 2024-10-15T09:20:34.615Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser-Assisted Liquid-Phase Etching of Copper Conductors and its Application to Advanced Integrated Circuit Interconnect

Published online by Cambridge University Press:  26 February 2011

Robert F. Miracky  and
Kantesh Doss
Robert F. Miracky
Affiliation:
Microelectronics and Computer Technology Corporation (MCC) 12100 Technology Blvd., Austin, TX 78727
Kantesh Doss
Affiliation:
Microelectronics and Computer Technology Corporation (MCC) 12100 Technology Blvd., Austin, TX 78727
Get access

Abstract

We have demonstrated a method f or the selective-area, laser-assisted liquid-phase etching of 6-μm thick copper conductors, by focusing the 488-μm line of an argon ion laser onto the surface of samples immersed in a dilute solution containing sulfuric acid and hydrogen peroxide. Average etch rates of up to 5.0 μm/s have been achieved, in the process of completely severing 14-μm wide copper lines, with little attendant damage to the underlying layer of polyimide. Two etchant formulations were identified which exhibited large etch rates at elevated temperatures and low enough background etch rates (approximately 1 μm/hr at 0 °C) to be useful in practical applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 435
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Silversmith, D.J., Ehrlich, D.J., Tsao, J.Y., Mountain, R.W., and Sedlacek, J.H.C. in Laser-Controlled Chemical Processing of Surfaces, edited by Johnson, A.W., Ehrlich, D.J., and Schlossberg, H.R. (Mater. Res. Soc. Proc. 29, Pittsburgh, PA 1984) pp. 55–59.Google Scholar
2 Johnson, A.W. and Greenberg, K.E. in Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces, edited by Donnelly, V., Herman, I., and Hirose, M. (Mater. Res. Soc. Proc. 75, Pittsburgh, PA 1987) pp. 645–649.Google Scholar
3 Black, J.G., Doran, S.P., Rothschild, M., Sedlacek, J.H.C., and Ehrlich, D.J. in Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces, edited by Donnelly, V., Herman, I., and Hirose, M. (Mater. Res. Soc. Proc. 75, Pittsburgh, PA 1987) pp. 651–655.; J.G. Black, S.P. Doran, M. Rothschild, and D.J. Ehrlich, Appl. Phys. Lett. 50, 1016 (1987).Google Scholar
4 Ehrlich, D.J., Williams, D.F., Sedlacek, J.H.C., Rothschild, M., and Schwarz, S.E., IEEE Elec. Dev. Lett. EDL–8, 110 (1987).Google Scholar
5 Tsao, J.Y. and Ehrlich, D.J., Appl. Phys. Lett 43, 146 (1983); J.Y. Tsao and DJ. Ehrlich, J. Electrochem. Soc. 133, 2244 (1986).Google Scholar
6 Loper, G.L. and Tabat, M.D. in Laser Assisted Deposition, Etching, and Doping, edited by Allen, S. (Proc. SPIE 459, Bellingham, WA, 1984) pp. 121–127.Google Scholar
7 Tuckerman, D.B., IEEE Elec. Dev. Lett. EDL–8, 540 (1987).Google Scholar
8 Jensen, R.J., Cummings, J.P., and Vora, H., IEEE Trans. Components, Hybrids, and Manufacturing Technology CHMT–7, 384 (1984).Google Scholar
9 Hart, A.C., Trans. Institute of Metals Finishing 61,46 (1983).Google Scholar
10 Luke, D.A., Trans. Institute of Metals Finishing 62, 81 (1984).Google Scholar
11 Fontana, M. and Greene, N., Corrosion Engineering, (McGraw-Hill Book Co., New York, 1967).Google Scholar