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Ion Implantation Damage and its Annealing Characteristics in an AlAs/GaAs Layer Structure

Published online by Cambridge University Press:  26 February 2011

A. G. Cullis ,
D. C. Jacobson ,
J. M. Poate ,
N. G. Chew ,
C. R. Whitehouse  and
S. J. Pearton
A. G. Cullis
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Malvern, Worcs WR14 3PS, UK
D. C. Jacobson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA
J. M. Poate
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA
N. G. Chew
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Malvern, Worcs WR14 3PS, UK
C. R. Whitehouse
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Malvern, Worcs WR14 3PS, UK
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA
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Abstract

The implantation of Ar+ ions into AlAs/GaAs layered samples is shown to give very different damage structures in the two materials. While the GaAs is relatively easily amorphised, the AlAs is quite resistant to damage accumulation and remains crystalline for the ion doses employed in these investigations. The behaviour of the different damage structures when subjected to rapid thermal annealing treatments is described in some detail. It is demonstrated that differences in the initial damage state have a strong influence upon the nature of lattice defects produced by annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 361
Copyright
Copyright © Materials Research Society 1989

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References

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