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Ion Effects in Optical Films

Published online by Cambridge University Press:  16 February 2011

U. J. Gibson
U. J. Gibson*
Affiliation:
Thayer School of Engineering, Dartmouth College, Hanover NH 03755
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Abstract

Ion bombardment during growth of thin films has been shown to be a powerful technique for alteration of a wide variety of film properties from index of refraction and stoichiometry to density and abrasion resistance. A brief review of the deposition processes and ion effects of relevance to the production of optical films is presented. Application of the technique to some particular problems in films with both optical and protective roles, and the use of ion beams to alter the chemical composition and hence index of films will be discussed. Both homogeneous and spatially non-uniform coatings will be discussed, including generation of multilayer filters and gradient index structures in waveguiding films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 263
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Smidt, F.A., International Materials Review vol.35, no. 2, pp. 61–1 28 (1990).Google Scholar
2. Savvides, N., Thin Solid Films vol. 163, pp. 13–32 (1988).Google Scholar
3. Martin, P.J., J. Vac. Sci. Technol., A vol. 5, no. 4, p. 2158–9 (1987).Google Scholar
4. Gibson, U.J., Phys. Thin Films, 13, 109–50 (1987).Google Scholar
5. Gu, P.F., Materials and Manufacturing Processes vol. 5, no. 1, p. 79–91 (1990).Google Scholar
6. Flory, F., Proceedings of the SPIE - The International Society for Optical Engg., vol. 1270, p. 172–83 (1990).Google Scholar
7. Harper, J.M.E., Cuomo, J.J., Gambino, R.J., and Kaufman, H.E., ”Ion Bombardment Modification of Surfaces: Fundamentals and Applications”, (ed.Auciello, O. and Kelly, R.), Chap. 4, 127–162; Amsterdam, Elsevier Science (1984).Google Scholar
8. Martin, P.J., J. Mater. Sci., 21, 1 (1986).Google Scholar
9. Ebert, J., Proc. SPIE - Int. Soc. Opt. Eng. 325, 29 (1982).Google Scholar
10. Allen, T.H., Proc. - Int. Soc. Opt. Eng. SPIE, 325, 93 (1982).Google Scholar
11. Muller, K.H., J. Appl. Phys., 58, 2573 (1985).Google Scholar
12. Gibson, U.J. and Kennemore, C.M. III, Thin Solid Films, 124, 27 (1985).Google Scholar
13. Gibson, U.J. and Kennemore, C.M. III, Proc. SPIE, 678, 130 (1986).Google Scholar
14. Muller, K.H., J. Appl. Phys., 59, 2803 (1986).Google Scholar
15. Muller, K.H., Surf. Sci. 184, L375 (1987)Google Scholar
16. Gluck, N.S., Sankur, H., Gunning, W.J., Mater. Res. Soc. Symp. Proc., 152, 195–200 (1989).Google Scholar
17. Kaspar, M., Pfefferkorn, R., Ramm, J., Proc. SPIE - Int. Soc. Opt. Eng., 1270, 105–15 (1990).Google Scholar
18. Gluck, N.S., Sankur, H., Gunning, W.J., J. Vac. Sci. Technol., A, 7(5), 2983–7 (1989).Google Scholar
19. Targove, J.D., Lehan, J.P., Lingg, L.J., Macleod, H.A., Leavitt, J.A., McIntyre, L.C. Jr., Appl. Opt., 26(17), 3733–7 (1987)Google Scholar
20. Weller, D., Reim, W., Schrijner, P., IEEE Trans. Magn., 24(6), 2554–6 (1988).Google Scholar
21. Asano, M., Umeda, K., Tasaki, A., Jpn. J. Appl. Phys., Part 1, 29 (10), 1985–6 (1990).Google Scholar
22. Krauss, A.R., 0. Auciello, Kingon, A.I., Ameen, M.S., Liu, Y.L., Barr, T., Graettinger, T.M., Rou, S.H., Soble, C.S., Gruen, D.M., J. Applied Surf. Sci. vol. 46. p. 67–73 (1990).Google Scholar
23. Kyogoku, T., Suzuki, T., Mino, M., J. Applied Opt. vol 29, no. 28, p. 4071–6 (1990).Google Scholar
24. Puik, E.J., Wiel, M.J. vander, Zeijlemaker, H. and Verhoeven, J., Applied Surf. Sci., 47, 251–260 (1991).Google Scholar
25. Sainty, W.G., Netterfield, R.P., and Martin, P.J., Appl. Opt., 23, 16 (1984).Google Scholar
26. Martin, P.J. and Netterfield, R.P., Appl. Opt., 24, 1732 (1985).Google Scholar
27. Cornett, K.D. and Gibson, U.J., Rev. Sci. Instrum., 598, 1341 (1988).Google Scholar
28. Baglin, J.E.E., ”Ion Beam Modification of Insulators”, (ed. Mazzoldi, P. and Arnold, G.W.), Chap. 15, 585; Amsterdam, Elsevier, (1986).Google Scholar
29. Cuomo, J.J., Harper, J.M.E., Guarnieri, C.R., Yee, D.S., Attanasio, L.J., Angilello, J., Wu, C.T., and Hammond, R.H., J. Vac. Sci. Technol., 20, 349 (1982).Google Scholar
30. Roy, R.A., Cuomo, J.J., and Yee, D.S., J. Vac. Sci. Technol., A6, 1621 (1988).Google Scholar
31. Jacobs, S.D., Hrycin, A.L., Cerqua, K.A., Kennemore, C.M. III, and Gibson, U.J., Thin Solid Films, 144, 69 (1986).Google Scholar
32. Hwangbo, C.K., Lingg, L.J., Lehan, J.P., Macleod, H.A., Suits, F., Appl. Opt., 28(14), 2779–84 (1989).Google Scholar
33. Case, F.C., J. Vac. Sci. Technol., A, 7 (3, Pt.1), 1194–8 (1989).Google Scholar
34. Targove, J.D., Lingg, L.J., Lehan, J.P., Hwangbo, C.K., Macleod, H.A., Leavitt, J.A., McIntyre, L.C. Jr., Mater. Res. Soc. Symp. Proc. 93, 311–6 (1987).Google Scholar
35. Puckett, R., Stelmack, L., Michel, S., O'Connell, J., Natishan, P., J. Surf. Coat. Technol., vol 41, no. 3, p. 259–67 (1990).Google Scholar
36. Netterfield, R.P., Martin, P.J., McKenzie, D.R., J. of Mater. Sci. Ltrs. vol. 9, no. 8, p. 972–4 (1990).Google Scholar
37. Williams, F.L., Reicher, D.W., Juang, C.-B., McNeil, J.R., J. Vac. Sci. & Technol. A vol. 7, no. 3. pt. 2, p. 2286–8 (1989).Google Scholar
38. AI-Jumaily, G.A., Mooney, T.A., Spurgeon, W.A., Dauplaise, H.M., J. Vac. Sci. & Technol. A, vol 7, no. 3 pt. 2 p. 2280–5 (1989).Google Scholar
39. Hwangbo, C.K., Lingg, L.J., Lehan, J.P., Maclead, A., Suits, F., Appl. Opt. vol. 28, no. 14 p. 2779–84 (1989).Google Scholar
40. Ruth, M., Tuttle, J., Goral, J., Noufi, R., J. of Crystal Growth vol. 96, no. 2 p. 363–8 (1989).Google Scholar
41. Xianghuai, L., Bin, X., Zhihong, Z., Zuyao, Z., Shichang, Z., Nucl. Instru. & Meth. Phys. Res. vol. B39, no. 1–4 p. 185–9 (1989).Google Scholar
42. Ogata, K., Andoh, Y., Kamijo, E., Nucl. Instru. & Meth. Phys. Res. vol. B39, no. 1–4 p. 178–81 (1989).Google Scholar
43. Sainty, W.G., Martin, P.J., Netterfield, R.P., McKenzie, D.R., Cockayne, D.J.H, Dwarte, D.M., J. Appl. Phys. vol. 64. no. 8 p. 3980–6 (1988).Google Scholar
44. Savvides, N., Window, B., J. Appl. Phys. vol. 62, no. 1 p. 225–34 (1988).Google Scholar
45. Netterfield, R.P., Muller, K.H., McKenzie, D.R., Goonan, M.J., and Martin, P.J., J. Appl. Phys. vol 63, no. 3 p. 760–9 (1988).Google Scholar
46. Kennemore, C.M. III, Ph.D. Thesis, Univ. of Arizona (Tucson 1991).Google Scholar
47. Himel, M.D., Applied Optics, 35, 4413 (1986).Google Scholar