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Investigation of Time of Flight Photocurrents in a-Si:H
Published online by Cambridge University Press: 26 February 2011
Abstract
Transient photoconductivity can provide extensive information concerning the characteristics and energy distribution (g(E) ) of trapping centres in disordered solids. In this paper, we use both pre-transit (extraction free) and post-transit current decays, from the TOF experiment, to probe g(E) in a-Si:H of intentionally reduced quality.
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- Copyright © Materials Research Society 1988
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