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Investigation of the Performance of a Thin-Film Transistor-Driven Linear Image Sensor

Published online by Cambridge University Press:  26 February 2011

G. Brunst ,
S. Griep ,
H. Harms ,
K. Rohleder  and
K. Rosan
G. Brunst
Affiliation:
Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, D-8000 München 83, West Germany
S. Griep
Affiliation:
Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, D-8000 München 83, West Germany
H. Harms
Affiliation:
Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, D-8000 München 83, West Germany
K. Rohleder
Affiliation:
Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, D-8000 München 83, West Germany
K. Rosan
Affiliation:
Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, D-8000 München 83, West Germany
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Abstract

The performance of a thin-film transistor (TFT) driven linear image sensor is analyzed. By experiment and computer simulation the charge trans-fer is investigated and the results are applied to interprete the performance of the conventional readout circuit. Its main disadvantage are the large number of crossovers between signal lines. Therefore, an alternative readout circuit with reduced number of crossovers is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 249
Copyright
Copyright © Materials Research Society 1988

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References

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