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Interdiffusion of Amorphous Si/Ge Multilayers Under Hydrostatic Pressure
Published online by Cambridge University Press: 15 February 2011
Abstract
We report initial results of an x-ray diffraction study of the pressure-dependence of the interdiffusion rate in amorphous Si/Ge Multilayers. Anneals were performed in a diamond anvil cell at 700 K for various pressures and durations. Interdiffusion was measured by Monitoring the rate of decay of the artificial Bragg peaks associated with the multilayer periodicity. A consistent increase in diffusivity was seen with pressure, characterized by an activation volume of -25±11 percent of the atomic volume of Si. An atomistic mechanism that Might account for such behavior is discussed.
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- Copyright © Materials Research Society 1994
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