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Interaction of C60 with Isoelectronic Surfaces: Graphite and Hexagonal Boron Nitride

Published online by Cambridge University Press:  11 February 2011

P. Reinke ,
H. Feldermann  and
P. Oelhafen
P. Reinke
Affiliation:
Physikalisches Institut, Universität Göttingen, Bunsenstr. 7–9, 37073 Göttingen, Germany
H. Feldermann
Affiliation:
Physikalisches Institut, Universität Göttingen, Bunsenstr. 7–9, 37073 Göttingen, Germany
P. Oelhafen
Affiliation:
Institut für Physik, Universität Basel, Klingelbergstr. 82, 4056 Basel, Switzerland
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Abstract

In the present study we focus on the interaction of C60 with sp2 boron nitride (BN), a surface that is isoelectronic to graphite. The nanocrystalline BN substrate was deposited by mass selected ion beam and consists of an sp2 surface layer, which covers a cubic-BN film. The interaction and electronic properties of the C60-BN system are observed by photoelectron spectroscopy in the x-ray (XPS) and ultraviolet regime (UPS). The experiment is initiated by sequential deposition of C60 and the overlayer growth proceeds via island formation. In a second step the sample is annealed at a rate of 5–10 K/minute while simultaneously recording the UPS spectra. The majority of C60 desorbs from the sp2 BN surface at 493 K. The remaining C60 (initially about 0.6 ML) is gradually removed with increasing temperature (up to 813 K) but never completely desorbed and presumably attached at surface imperfections or grain boundaries of the nanocrystalline material. No carbide formation, preferential interaction of C60 with either element or a charge transfer are observed. The presence of C60 induces an upward band bending and related peak shifts in the sp2 BN surface layer and to a lesser extent in the underlying c-BN bulk. An upward band bending is likewise observed in the C60 overlayer, and the Fermi level has therefore to be pinned by defects in the interface region. The layered structure of the BN film allows to probe the extension of the space charge layer in the BN film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 750: Symposium Y – Surface Engineering 2002–Synthesis, Characterization and Applications , 2002 , Y5.22
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1 Zimmermann, U., Malinowski, N., Näher, U., Frank, S., and Martin, T. P., Phys. Rev. Lett. 72, 3542 (1994).Google Scholar
2 Hebard, A. F., Eom, C. B., Iwasa, Y., Lyons, K. B., Thomas, G. A., Rapkine, D. H., Fleming, R. M., Haddon, R. C., Phillips, J. M., Marshall, J. H., and Eick, R. H., Phys. Rev. B 50, 17740 (1994).Google Scholar
3 Nolen, S. and Ruggiero, S. T., Phys. Rev. B 58, 10942 (1998).Google Scholar
4 Hou, J. G., Li, X., Wang, H., and Wang, B., J. Phys. Chem. Sol. 61, 995 (2000).Google Scholar
5 Hamza, A. V., Balooch, M., and Moalem, M., Surf. Sci. Lett. 317 (1994).Google Scholar
6 Girard, C., Lambin, P., Dereux, A., and Lucas, A. A., Phys. Rev. B. 49, 11425 (1994).Google Scholar
7 Li, Z. Y., Surf. Sci. 441, 366 (1999).Google Scholar
8 Luo, M. F., Li, Z. Y., and Allison, W., Surf. Sci. 402–404, 437 (1998).Google Scholar
9 Rey, C., Garcia-Rodeja, J., Gallego, L. J., and Alonso, J. A., Phys. Rev. B 55, 7190 (1997).Google Scholar
10 Wertheim, G. K. and Buchanan, D. N. E., Phys. Rev. B 50 (1994).Google Scholar
11 Miyata, N., Moriki, K., Mishima, O., and Hattori, T., Phys. Rev. B 40, 12028 (1989).Google Scholar
12 Hofsäss, H., Ronning, C., Griesmeier, U., Gross, M., Reinke, S., and Kuhr, M., Appl. Phys. Lett. 67, 46 (1995).Google Scholar
13 Hofsäss, H., Feldermann, H., Sebastian, M., and Ronning, C., Phys. Rev. B 55, 13230 (1997).Google Scholar
14 Park, K. S., Lee, D. Y., Kim, K. J., and Moon, D. W., J. Vac. Sci. Technol. A 15, 1041 (1997).Google Scholar
15 Reinke, P., Oelhafen, P., Feldermann, H., Ronning, C., and Hofsäss, H., J. Appl. Phys. 88, 5597 (2000).Google Scholar
16 Widmayer, P., Boyen, H.-G., Ziemann, P., Reinke, P., Oelhafen, P., Phys. Rev. B 59, 5233 (1999).Google Scholar
17 Kawasaki, M., Matsuzaki, Y., and Koinuma, H., 39, 13316 (1989).Google Scholar
18 Seah, M. P. and Dench, W. A., Surf. Interface Anal. 1, 2 (1979).Google Scholar
19 Reinke, P. and Oelhafen, P., J. Chem. Phys. 116, 9850 (2002).Google Scholar
20 Moalem, M., Balooch, M., Hamza, A. V., Siekhaus, W. J., and Olander, D. R., J. Chem. Phys. 99, 4855 (1993).Google Scholar
21 Fujita, J., Kuroshima, S., Satoh, T., Tsai, J. S., and Ebbesen, T. W., Appl. Phys. Lett. 63, 1008 (1993).Google Scholar
22 Hunt, M. R. C., Rudolf, P., and Modesti, S., Phys. Rev. B 55, 7882 (1997).Google Scholar
23 Enkvist, C., Lunell, S., Sjögren, B., Brühwiler, P. A., and Svensson, S., J. Chem. Phys. 103, 6333 (1995).Google Scholar
24 Lichtenberger, D. L., Nebesny, K. W., Ray, C. D., Huffman, D. R., and Lamb, L. D., Chem. Phys. Lett. 176, 203 (1991).Google Scholar
25 Lof, R. W., Veenendaal, M. A. v., Koopmans, B., Jonkman, H. T., and Sawatzky, G. A., Phys. Rev. Lett. 68, 3924 (1992).Google Scholar
26 Troullier, N. and Martins, J. L., Phys. Rev. B 46, 1754 (1992).Google Scholar
27 Weaver, J. H., Martins, J. L., Komeda, T., Chen, Y., Ohno, T. R., Kroll, G. H., Troullier, N., Haufler, R. E., and Smalley, R. E., Phys. Rev. Lett. 66, 1741 (1991).Google Scholar
28 Dresselhaus, M. S., Dresselhaus, G., and Eklund, P. C., Science of Fullerenes and Carbon Nanotubes (Academic Press, San Diego, 1996).Google Scholar
29 Doniach, S. and Sunjic, M., J. Phys. C: Solid St. Phys. 3, 285 (1970).Google Scholar
30 Marquardt, D. W., J. Soc. Indust. Appl. Math. 11, 431 (1963).Google Scholar
31 Shirley, D. A., Phys. Rev. B 5, 4709 (1972).Google Scholar
32 Gensterblum, G., Hevesi, K., Han, B. Y., Yu, L.-M., Pireaux, J.-J., Thiry, P. A., Caudano, R., Lucas, A. A., Bernaerts, D., Amelinckx, S., Tendeloo, G. v., Bendele, G., Buslaps, T., Johnson, R. L., Foss, M., Feidenhans'ı, R., and Lay, G. L., Phys. Rev. B. 50, 11981 (1994).Google Scholar
33 Ohno, T. R., Chen, Y., Harvey, S. E., Kroll, G. H., and Weaver, J. H., Phys. Rev. B 44, 13747 (1991).Google Scholar