Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-12-01T00:40:25.561Z Has data issue: false hasContentIssue false
  • English
  • Français

Interaction Between Dislocations and Misfit Interface

Published online by Cambridge University Press:  14 March 2011

A. Kuronen ,
K. Kaski ,
L. F. Perondi  and
J. Rintala
A. Kuronen
Affiliation:
Helsinki University of Technology, Laboratory of Computational Engineering P.O.Box 9400, FIN-02015 HUT, FINLAND
K. Kaski
Affiliation:
Helsinki University of Technology, Laboratory of Computational Engineering P.O.Box 9400, FIN-02015 HUT, FINLAND
L. F. Perondi
Affiliation:
Helsinki University of Technology, Laboratory of Computational Engineering P.O.Box 9400, FIN-02015 HUT, FINLAND
J. Rintala
Affiliation:
Helsinki University of Technology, Laboratory of Computational Engineering P.O.Box 9400, FIN-02015 HUT, FINLAND
Get access

Abstract

Mechanisms responsible for the formation of a misfit dislocation in a lattice-mismatched system have been studied using Molecular Dynamics simulations of a two-dimensional Lennard-Jones system. Results show clearly how the strain due to the lattice-mismatched interface acts as a driving force for migration of dislocations in the substrate and the overlayer and nucleation of dislocations in the overlayer edges. Moreover, we observe dislocation reactions in which the gliding planes of dislocations change such that they can migrate to the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 634: Symposium B – Structure and Mechanical Properties of Nanophase Materials-Theory & Computer Simulations vs. Experiment , 2000 , B4.9.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Fitzgerald, E. A., Mat. Sci. Rep. 7, 87 (1991).Google Scholar
2. Hull, R. and Bean, J. C., Crit. Rev. Solid State. Mat. Sci. 17, 507 (1992).Google Scholar
3. Hull, R. and Stach, E. A., in Thin Films: Heteroepitaxial Systems, Vol. 15 of Series on Directions in Condensed Matter Physics, edited by Liu, A. W. K. and Santos, M. B. (World Scientific, Singapore, 1999), Chap. 7, pp. 299–367.Google Scholar
4. Matthews, J. W., J. Vac. Sci. Technol. 12, 126 (1975).Google Scholar
5. Hagen, W. and Strunk, H., Appl. Phys. 17, 85 (1978).Google Scholar
6. Strunk, H., Hagen, W., and Bauser, E., Appl. Phys. 18, 67 (1979).Google Scholar
7. LeGoues, F. K., Meyerson, B. S., and Morar, J. F., Phys. Rev. Lett. 66, 2903 (1991).Google Scholar
8. Merimaa, J., Perondi, L. F., and Kaski, K., Comp. Phys. Comm. 124, 60 (1999).Google Scholar
9. Peña, M. Diaz, Pando, C., and Renuncio, J. A. R., J. Chem. Phys. 76, 325 (1982).Google Scholar
10. Hirth, J. P. and Lothe, J., Theory of Dislocations, 2ed. (Krieger Publishing Company, Malabar, 1992).Google Scholar
11. Relaxation was performed by scaling down the velocities of all those atoms that satis-fied the condition vi · Fi < 0 where vi and Fi are the velocity and total force of atom i at all time steps for a few picoseconds.Google Scholar