Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-02T23:15:19.197Z Has data issue: false hasContentIssue false
  • English
  • Français

InP Self Assembled Quantum Dot Lasers Grown on GaAs Substrates by Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  21 March 2011

R. D. Dupuis ,
J. H. Ryou ,
R. D. Heller ,
G. Walter ,
D. A. Kellogg ,
N. Holonyak Jr ,
C. V. Reddy ,
V. Narayanamurti ,
D. T. Mathes  and
R. Hull
R. D. Dupuis
Affiliation:
Microelectronics Research Center, The University of Texas at Austin 10100 Burnet Road, Building 160, Austin, TX 78758 USA Phone: +1-512-471-0537, Fax: +1-512-471-0957, e-mail: [email protected]
J. H. Ryou
Affiliation:
Microelectronics Research Center, The University of Texas at Austin 10100 Burnet Road, Building 160, Austin, TX 78758 USA Phone: +1-512-471-0537, Fax: +1-512-471-0957, e-mail: [email protected] Now with Honeywell VCSEL Products Division, Plymouth MN 55441
R. D. Heller
Affiliation:
Microelectronics Research Center, The University of Texas at Austin 10100 Burnet Road, Building 160, Austin, TX 78758 USA Phone: +1-512-471-0537, Fax: +1-512-471-0957, e-mail: [email protected]
G. Walter
Affiliation:
Center for Compound Semiconductor Microelectronics, The University of Illinois at Urbana-Champaign, Urbana, IL
D. A. Kellogg
Affiliation:
Center for Compound Semiconductor Microelectronics, The University of Illinois at Urbana-Champaign, Urbana, IL
N. Holonyak Jr
Affiliation:
Center for Compound Semiconductor Microelectronics, The University of Illinois at Urbana-Champaign, Urbana, IL
C. V. Reddy
Affiliation:
Gordon McKay Laboratory of Applied Science, Harvard University, Cambridge, MA 02138
V. Narayanamurti
Affiliation:
Gordon McKay Laboratory of Applied Science, Harvard University, Cambridge, MA 02138
D. T. Mathes
Affiliation:
Department of Materials Science and Engineering, The University of Virginia, Charlottesville, VA
R. Hull
Affiliation:
Department of Materials Science and Engineering, The University of Virginia, Charlottesville, VA
Get access

Abstract

We describe the operation of lasers having active regions composed of InP self-assembled quantum dots embedded in In0.5Al0.3Ga0.2P grown on GaAs (100) substrates by MOCVD. InP quantum dots grown on In0.5Al0.3Ga0.2P have a high density on the order of about 1-2x10 cm-2 with a dominant size of about 10-15 nm for 7.5 ML growth.[1] These In0.5Al0.3Ga0.2P/InP quantum dots have previously been characterized by atomic-force microscopy, high-resolution transmission electron microscopy, and photoluminescence.[2] We report here the 300K operation of optically pumped red-emitting quantum dots using both double quantum-dot active regions and quantum-dot coupled with InGaP quantum-well active regions. Optically and electrically pumped 300K lasers have been obtained using this active region design; these lasers show improved operation compared to the lasers having QD-based active regions with threshold current densities as low as Jth ∼ 0.5 KA/cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 707: Symposium AA – Self-Assemble Processes in Materials , 2001 , H11.6.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Ryou, J. H., Dupuis, R. D., Walter, G., Holonyak, N. Jr, Mathes, D. T., Hull, R., Reddy, C. V., and Narayanamurti, V., J. Appl. Phys., to be published.Google Scholar
[2] Ryou, J. H., PhD. Dissertation, The University of Texas at Austin (2001).Google Scholar
[3] Arakawa, Y. and Sakaki, H., Appl. Phys. Lett. 40, 939 (1982).Google Scholar
[4] Asada, M., Miyamoto, Q., and Suematsu, Y., IEEE J. Quantum Electron. QE–22, 1915 (1986).Google Scholar
[5] Ledentsov, N. N., Grundmann, M., Heinrichsdorff, F., Bimberg, D., Ustinov, V. M., Zhukov, A. E., Maximov, M. V., Alferov, Zh. I., and Lott, J. A., IEEE J. Select. Topic. Quantum Electron. 6, 439 (2000).Google Scholar
[6] Stranski, I. N. and Krastanow, L., Akad. Wiss. Wien, Math-Naturwess. Klasse 146, 797 (1937).Google Scholar
[7] Shchukin, V. A. and Bimberg, D., Rev. Mod. Phys. 71, 1125 (1999).Google Scholar
[8] Ledentsov, N. N., Ustinov, V. M., Egorov, A. Y., Zhukov, A. E., Maksimov, M. V., Tavatadze, I. F., and Kop'ev, P. S., Semiconductors 28, 832 (1994).Google Scholar
[9] Park, G., Shchekin, O. B., Csutak, S., Huffaker, D. L., and Deppe, D. G., Appl. Phys. Lett. 75, 3267 (1999).Google Scholar
[10] Kurtenbach, A., Eberl, K., and Shitara, T., Appl. Phys. Lett. 66, 361 (1995).Google Scholar
[11] Kurtenbach, A., Ulrich, C., Jin-Phillipp, N. Y., Noll, F., Eberl, K., Syassen, K., and Phillipp, F., J. Electron. Mater. 25, 3 (1996).Google Scholar
[12] DenBaars, S. P., Reaves, C. M., Bressler, V.-Hill, Varma, S., Weinberg, W. H., and Petroff, P. M., J. Cryst. Growth 145, 721 (1994).Google Scholar
[13] Carlsson, N., Seifert, W., Petersson, A., Castrillo, P., Pistol, M. E., and Samuelson, L., Appl. Phys. Lett. 65, 3093 (1994).Google Scholar
[14] Ahopelto, J., Yamguchi, A. A., Nishi, K., Usui, A., and Sakaki, H., Jpn. J. Appl. Phys. Part 2 32, L32 (1993).Google Scholar
[15] Nabetani, Y., Sawada, K., Fukukawa, Y., Wakahara, A., Noda, S., Sasaki, A., J. Cryst. Growth 193, 470 (1998).Google Scholar
[16] Eberl, K., Kurtenbach, A., Zundel, M., Jin-Phillipp, N. Y., Phillipp, F., Moritz, A., Wirth, R., and Hangleiter, A., J. Cryst. Growth 175/176, 702 (1997).Google Scholar
[17] Riedl, T., Fehrenbacher, E., Hangleiter, A., Zundel, M. K., and Eberl, K., Appl. Phys Lett. 73, 3730 (1998).Google Scholar
[18] Manz, Y. M., Schmidt, O. G., and Eberl, K., Appl. Phys. Lett. 76, 3343 (2000).Google Scholar
[19] Porsche, J., Ost, M., Scholz, F., Fantini, A., Philipp, F., Riedl, T., and Hangleiter, A., IEEE J. Select. Topic Quantum Electron. 6, 482 (2000).Google Scholar
[20] Walter, G., Holonyak, N. Jr, Ryou, J. H. and Dupuis, R. D., Appl. Phys. Lett. 78, 26, 4091 (2001).Google Scholar
[21] Ryou, J. H., Dupuis, R. D., Walter, G., Kellogg, D. A., Holonyak, N. Jr, Mathes, D. T., Hull, R., Reddy, C. V., and Narayanamurti, V., Appl. Phys. Lett., 79, 4091 (2001).Google Scholar
[22] Ryou, J. H., Dupuis, R. D., Mathes, D. T., Hull, R., Reddy, C. V., and Narayanamurti, V., Appl. Phys. Lett. 78, 3526 (2001).Google Scholar
[23] Ryou, J. H., Dupuis, R. D., Reddy, C. V., Narayanamurti, V., Mathes, D. T., Hull, R., Mintairov, A, and Merz, J. L., J. Electron. Mat. 30, 471 (2001).Google Scholar
[24] Walter, G., Holonyak, N. Jr, Ryou, J. H. and Dupuis, R. D., Appl. Phys. Lett. 79, 3215 (2001).Google Scholar