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Influence of Structural Defects and Zinc Composition Variation on the Device Response of Cd1−xZnxTe Radiation Detectors

Published online by Cambridge University Press:  10 February 2011

H. Yoon ,
J. M. Van Scyoc ,
T. S. Gilbert ,
M. S. Goorsky ,
B. A. Brunett ,
J. C. Lundt ,
H. Hermon ,
M. Schieber  and
R. B. James
H. Yoon
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, CA 90095, [email protected]
J. M. Van Scyoc
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, CA 90095, [email protected]
T. S. Gilbert
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, CA 90095, [email protected]
M. S. Goorsky
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, CA 90095, [email protected]
B. A. Brunett
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
J. C. Lundt
Affiliation:
Sandia National Laboratories, Livermore, CA 94551
H. Hermon
Affiliation:
Sandia National Laboratories, Livermore, CA 94551
M. Schieber
Affiliation:
Sandia National Laboratories, Livermore, CA 94551
R. B. James
Affiliation:
Sandia National Laboratories, Livermore, CA 94551
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Abstract

Zinc composition variation and gross structural defects including grain and tilt boundaries, twins, and mechanical cracks in high pressure Bridgman Cd1−xZnxTe are characterized and correlated to various detector-related responses. Triple axis x-ray diffraction, double crystal x-ray topography, infrared microscopy, and etch pit density measurements are used to reveal and quantify the spatial distribution and the nature of the structural defects. Mechanical cracks in the material are found to act as conductive “shorting paths”, indicated by excessive leakage currents and reduced charge (electron) collection measured along these cracks. Reduced charge collection is also obtained across grain boundaries and in regions with poor crystallinity, indicating that they serve as carrier recombination sites. Finally, the effects of the zinc composition variation on the measured leakage current and the amount of electrons collected are found to be masked by gross structural defects. These characterization techniques provide a wealth of information which can be used not only to study the relationship between the structural and device properties of CdZnTe but also to screen production material for subsequent device fabrication.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 241
Copyright
Copyright © Materials Research Society 1998

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