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Improvements in Thallium Bromoiodide Photodetectors for Scintillation Spectrometers

Published online by Cambridge University Press:  21 February 2011

J.G. Zhang ,
L. Cirignano ,
K. Daley  and
M.R. Squillante
J.G. Zhang
Affiliation:
Radiation Monitoring Devices, Inc., Watertown, MA 02172
L. Cirignano
Affiliation:
Radiation Monitoring Devices, Inc., Watertown, MA 02172
K. Daley
Affiliation:
Radiation Monitoring Devices, Inc., Watertown, MA 02172
M.R. Squillante
Affiliation:
Radiation Monitoring Devices, Inc., Watertown, MA 02172
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Abstract

Thallium bromoiodide, a tuneable band gap semiconductor system, was investigated as a photodetector for scintillation spectrometers. Extensive zone refining of starting materials, based on numerical simulations, considerably enhanced the electrical resistivity to 1011 Ωcm. In addition, accelerated crucible rotation technique (ACRT) crystal growth and after-growth annealing have improved the charge carrier mobility-lifetime product. However, a relatively low signal-to-noise ratio due to a high dielectric constant and relatively low quantum efficiency continues to be an obstacle to achieving high performance, large area T1BrxI1−xphotodetectors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 329
Copyright
Copyright © Materials Research Society 1993

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