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Improvement of Photoelectrochemical Reaction for Hydrogen Generation from Water using N-face GaN
Published online by Cambridge University Press: 31 January 2011
Abstract
Photoelectrochemical properties of Ga- and N-face GaN grown by hydride vapor phase epitaxy (HVPE) were investigated. The properties were also compared with Ga-face GaN grown by metal-organic vapor phase epitaxy (MOVPE). The flatband potentials were in order of Ga-face GaN grown by MOVPE < N-face GaN < Ga-face GaN. The highest photocurrent density at zero bias was obtained from the N-face GaN. The photocurrent density was over 3 times larger than that of Ga-face GaN.
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- Copyright © Materials Research Society 2010
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