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Improvement in the FF over 0.700 by Controlling the Interface Quality

Published online by Cambridge University Press:  31 January 2011

Katsumi Kushiya ,
Y. Tanaka ,
H. Hakuma ,
S. Kijima ,
T. Aramoto ,
Y. Fujiwara ,
Y. Chiba ,
H. Sugimoto ,
Y. Kawaguchi  and
K. Kakegawa
Katsumi Kushiya
Affiliation:
[email protected], Showa Shell Sekiyu K.K., Solar Business Center (Atsugi), Kanagawa, Japan
Y. Tanaka
Affiliation:
[email protected], Showa Shell Sekiyu K.K., Solar Business Div. (Atsugi), Kanagawa, Japan
H. Hakuma
Affiliation:
[email protected], Showa Shell Sekiyu K.K., Solar Business Div. (Atsugi), Kanagawa, Japan
S. Kijima
Affiliation:
[email protected], Showa Shell Sekiyu K.K., Solar Business Div. (Atsugi), Kanagawa, Japan
T. Aramoto
Affiliation:
[email protected], Showa Shell Sekiyu K.K., Solar Business Div. (Atsugi), Kanagawa, Japan
Y. Fujiwara
Affiliation:
[email protected], Showa Shell Sekiyu K.K., Solar Business Div. (Atsugi), Kanagawa, Japan
Y. Chiba
Affiliation:
[email protected], Showa Shell Sekiyu K.K., Solar Business Div. (Atsugi), Kanagawa, Japan
H. Sugimoto
Affiliation:
[email protected], Showa Shell Sekiyu K.K., Solar Business Div. (Atsugi), Kanagawa, Japan
Y. Kawaguchi
Affiliation:
[email protected], Showa Shell Sekiyu K.K., Solar Business Div. (Atsugi), Kanagawa, Japan
K. Kakegawa
Affiliation:
[email protected], Showa Shell Sekiyu K.K., Solar Business Div. (Atsugi), Kanagawa, Japan
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Abstract

In this study, the pn hetero-interface between Zn(O,S,OH)x buffer and Cu(InGa)(SSe)2 (CIGSS) surface layers is discussed in order to achieve the fill factor (FF) over 0.73 and the circuit efficiency of 16 % on aperture area of over 800 cm2. Two resistances, i.e. shunt resistance (Rsh) and series resistance (Rs), in the circuits are employed as a yardstick to evaluate the interface quality. Since there are no realistic yardsticks on the Rs, the difference between Voc and optimum-power voltage (Vop) (i.e. Voc-Vop [V/cell]) is applied as a simple tool to evaluate the Rs. It is emphasized that it is important to reduce the Rs mainly correlated to the buffer deposition process and, as a result, the interface quality. We consider the Rs is dependent on the remaining Zn(OH)2 concentration in the Zn(O,S,OH)x buffer deposited by a chemical-bath deposition (CBD) technique. As an approach to make the Rs minimize and the Rsh maximize simultaneously, adjusting the thickness of a CBD-Zn(O,S,OH)x buffer layer and a non-doped ZnO layer deposited by a metal-organic chemical vapor deposition (MOCVD) technique has been effective to reduce the remaining Zn(OH)2 concentration. Determining the optimized deposition procedure to achieve the FF over 0.700 consistently, the circuit efficiency of 15.3 % with aperture area of 856 cm2 and the FF of 0.717 has been achieved.

Keywords

photovoltaicdeviceselectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1165: Symposium M – Thin-Film Compound Semiconductor Photovoltaics–2009 , 2009 , 1165-M06-06
Copyright
Copyright © Materials Research Society 2009

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References

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