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Improved Uniformity of Reacted GaAs Contacts by Interface Mixing

Published online by Cambridge University Press:  26 February 2011

C. J. Palmrøm ,
K. L. Kavanagh ,
M. J. Hollis ,
S. D. Mukherjee  and
J. W. Mayer
C. J. Palmrøm
Affiliation:
Materials Science and Engineering, Bard Hall. Cornell University, Ithaca. N.Y. 14853
K. L. Kavanagh
Affiliation:
School of Electrical Enaineering, Phillips Hall, Cornell University, Ithaca. N.Y. 14853 present address MIT Lincoln Labs
M. J. Hollis
Affiliation:
Materials Science and Engineering, Bard Hall. Cornell University, Ithaca. N.Y. 14853
S. D. Mukherjee
Affiliation:
School of Electrical Enaineering, Phillips Hall, Cornell University, Ithaca. N.Y. 14853 present address MIT Lincoln Labs
J. W. Mayer
Affiliation:
Materials Science and Engineering, Bard Hall. Cornell University, Ithaca. N.Y. 14853
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Abstract

Ion beam mixing is used to produce more uniform Au.Au-Ge and Au-Ge-Ni reacted contacts to GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 473
Copyright
Copyright © Materials Research Society 1985

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References

1. Braslau, N., Gunn, J.B. and Staples, J.L., Solid-State Electron., 10, 381 (1967).Google Scholar
2. Gyulai, J., Mayer, J.W., Rodriguez, V., Yu, A.Y.C. and Gopen, H.J.. J. Appl. Phys., 42, 3578 (1971).CrossRefGoogle Scholar
3. C.J. Palmstrom. Moraan, D.V. and Howes, M.J.. Nucl. Inst. and Meth. 150, 305 (1978).Google Scholar
4. Rosenberg, R.. Sullivan, M.J. and Howard, J.K., in Thin Films: Interdiffusion and Reaction, Poate, J.M., Tu, K.N. and Mayer, J.W. Eds., (Wiley-Interscience, N.Y., 1978). p 13.Google Scholar
5. Hung, L.S.. Mayer, J.W.. Zhang, M. and Wolf, E.D.. Appl. Phys. Lett. 43, 1123 (1983).Google Scholar
6. Inada, T., Kakinuma, H., Shirota, A.. Matsumoto, J., Ishikiriyama, M. and Funaki, Y., Proc. Ion Beam Modification of Materials 1984 (to be published).Google Scholar
7. Tsutsui, K. and Furukawa, S., J. Appl. Phys., 56, 560 (1984).Google Scholar
8. Smith, S. and Solomon, J.. private communication.Google Scholar