Hostname: page-component-745bb68f8f-f46jp Total loading time: 0 Render date: 2025-01-12T09:47:55.842Z Has data issue: false hasContentIssue false
  • English
  • Français

Improved Stability of Amorphous Silicon by Post-Deposition Fluorine Implantation

Published online by Cambridge University Press:  26 February 2011

Ruud E. I. Schropp
Ruud E. I. Schropp*
Affiliation:
Department of Applied Physics, University of Groningen, The Netherlands.
Get access

Abstract

In this paper it is demonstrated for the first time that the material properties of amorphous silicon films deposited from a pure silane plasma can be improved by an appropriate fluorine implantation. It is shown that the field-effect density of states is reduced by this treatment, and that the instability induced by different treatments is reduced. This technique is of particular interest for the fabrication of thin film transistors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 237
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Staebler, D.L. and Wronski, C.R., Appl. Phys. Lett, 31, 292 (1977).CrossRefGoogle Scholar
[2] Staebler, D.L. and Wronski, C.R., J. Appl. Phys. 51, 3262 (1980).CrossRefGoogle Scholar
[3] Hepburn, A.R., Marshall, J.M., Main, C., Powell, M.J. and van Berkel, C., Phys. Rev. Lett., 56, 2215 (1986).Google Scholar
[4] Schropp, R.E.I. and Verwey, J.F., Appl. Phys. Lett. 50, 185 (1987).Google Scholar
[5] Ovshinsky, S.R. and Madan, A., Nature 276, 482 (1978).CrossRefGoogle Scholar
[6] Madan, A., Ovshinsky, S.R. and Benn, E., Phil. Mag. B 40, 259 (1979).Google Scholar
[7] Kruehler, M.W., Plaetner, R.D., Moeller, M., Rauscher, B. and Stetter, W., J. Non-Cryst. Solids 35 & 36, 333 (1980)Google Scholar
[8] Schropp, R.E.I., Veltkamp, J.W.C., Snijder, J. and Verwey, J.F., IEEE Trans. Electron Dev. ED–32, 1757 (1985).Google Scholar
[9] Neudeck, G.W. and Malhotra, A.K., Solid State Electronics 19, 721 (1976).Google Scholar
[10] Uesugi, T., Ihara, H. and Matsumura, H., Jap. J. Appl. Phys. 24, 909 (1985).Google Scholar
[11] Matsumura, H., Maeda, M. and Furukawa, S., Jap. J. Appl. Phys. 22, 771 (1983).CrossRefGoogle Scholar
[12] Jackson, W.B. and Moyer, M.D., Phys. Rev. B 36, 6217 (1987).CrossRefGoogle Scholar