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Improved Quality of Bulk II-VI Substrates for HgCdTe and HgZnTe Epitaxy

Published online by Cambridge University Press:  21 February 2011

Sanghamitra Sen  and
John E. Stannard
Sanghamitra Sen
Affiliation:
Santa Barbara Research Center, 75 Coromar Drive, Goleta, CA 93117
John E. Stannard
Affiliation:
Santa Barbara Research Center, 75 Coromar Drive, Goleta, CA 93117
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Abstract

Single crystals of CdTe or dilute alloys of Cdl−y ZnyTe (y ≤ 0.04) and CdTel−zSez (z ≤ 0.04) with low defect density, high purity and large single-crystal area (>30 cm2) are required as substrates for high-quality epitaxial Hgl−xCdxTe thin films in the infrared (IR) detector industry. Bridgman or gradient freeze is the most common technique used for commercial production of these materials because of its success in producing large area substrates of good quality and reproducibility. For epitaxial growth of Hg1−xZnxTe, which has been of considerable interest in recent years as an IR detector material, the substrate of choice has been Cd0.80Zn0.20Te, for lattice matching with long wavelength Hg1−xZnxTe epitaxial layers (x = 0.13–0.14). The primary focus of this paper is on CdZnTe which is currently the preferred substrate material and most widely used for both HgCdTe and HgZnTe epitaxy. This paper reviews the current status of bulk substrate technology for IR detector applications, highlighting critical issues and essential research areas for further improvement of these materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 391
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Final Report, Manufacturing Technology for HgCdTe Focal Plane Arrays, USAF, WL Contract No. F33615-86-C-5006 (1987-1991).Google Scholar
2. Tung, T., DeArmond, L. V., Herald, R. F., Kalisher, M. H., Olson, D. A., Risser, R. F., Stevens, A. P., and Tighe, S. J., SPIE Conf. Proc. 1735, SPIE Int. Sympos. on Opt. Appl. Sci. and Engr., San Diego, July 1992.Google Scholar
3. Cockrum, C. A., Gesswein, F. I., Rosbeck, J. P., and Taylor, S. M., Proc. IRIS Detector Specialty Meeting, Aug. 1991.Google Scholar
4. Bell, S. L. and Sen, S., J. Vac. Sci. Technol. A 3 (1), 112 (1985).CrossRefGoogle Scholar
5. Sen, S., Johnson, S. M., Kiele, J. A., Konkel, W. H. and Stannard, J. E., Mat. Res. Soc. Symp. Proc., Vol. 161, P. 3 (1991).CrossRefGoogle Scholar
6. McDevitt, S., John, D. R., Sepich, J. L., Bowers, K. A., Schetzina, J. F., Rai, R. S. and Mahajan, S., Mat. Res. Soc. Symp. Proc., Vol. 161, P. 15 (1991).CrossRefGoogle Scholar
7. Johnson, S. M., Rhiger, D. R., Rosbeck, J. P., Peterson, J. M., Taylor, S. M., and Boyd, M. E., J. Vac. Sci. Technol. B 10, 1499 (1992).CrossRefGoogle Scholar
8. Sen, S., Konkel, W. H., Tighe, S. J., Bland, L. G., Sharma, S. R., and Taylor, R. E., J. Crystal Growth 86, 111, (1988).CrossRefGoogle Scholar
9. NEVADA Software Package, User's Manual, Turner Associates, P. 0. Box 426, Brea, California.Google Scholar
10. Nakagawa, K., Maeda, K. and Takeuchi, S., Appl. Phys. Letters 34, 574, (1979).CrossRefGoogle Scholar
11. Vydyanath, H. R., Ellsworth, J., Kennedy, J. J., Dean, B., Johnson, C. J., Neugebauer, G. T., Sepich, J., and Liao, P., J. Vac. Sci. Technol. B 10(4), 1476, (1992).CrossRefGoogle Scholar
12. Azoulay, M., Rotter, S., Gafni, G., Tenne, R., and Roth, M., J. Crystal Growth 117,276,(1992).CrossRefGoogle Scholar
13. Yokota, K., Yoshikawa, T., Inano, S., Morioka, T., and Katayama, S., Appl. Phys. Lett. 56 (9),866, (1990).CrossRefGoogle Scholar
14. Mozer, W. E., and Comtois, R. R., Paper presented at 1992 Workshop on Measurement Techniques For Characterization Of HgCdTe Materials, Processing, And Detectors, October 15-16, 1992, Danvers, Massachusetts.Google Scholar