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Hrtem Study Of Dislocations In Gesi/Si Heterostructures Grown By VPE
Published online by Cambridge University Press: 15 February 2011
Abstract
GeSi/Si heterostructures grown by atmospheric chemical vapor epitaxy have been studied by cross sectional high resolution transmission electron microscopy (HRTEM). For the first time we have observed an interstitial-type dislocation loop which is located near to a 60° misfit dislocation in the initially prepared GeSi/Si sample. After 30 minutes observation, the interstitial-type dislocation loop disappeared and the 60° dislocation climbed. Moreover, we have observed dissociated 60° dislocations with about 9 nm width of stacking fault existing in silicon substrate.
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