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Hot-Wire Deposited Nanocrystalline Silicon TFTs on Plastic Substrates

Published online by Cambridge University Press:  01 February 2011

Farhad Taghibakhsh ,
Michael M. Adachi  and
Karim S. Karim
Farhad Taghibakhsh
Affiliation:
[email protected], Simon Fraser University, School of Engineering Science, 8888 University Drive, Burnaby, V5B 2P5, Canada
Michael M. Adachi
Affiliation:
[email protected], Simon Fraser University, School of Engineering Science, 8888 University Drive, Burnaby, V5A 1S6, Canada
Karim S. Karim
Affiliation:
[email protected], Simon Fraser University, School of Engineering Science, 8888 University Drive, Burnaby, V5A 1S6, Canada
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Abstract

Hot-wire chemical vapor deposition (HWCVD) technique was used to deposit nanocrystalline silicon (nc-Si) thin film transistors (TFT) on thin polyimide sheets. Two straight tantalum filaments at 1850°C with a substrate to filament distance of 4 cm was used to deposit HWCVD nc-Si with no thermal damage to plastic sheet. Top-gate staggered TFTs were fabricated at 150°C and 250°C using a HWCVD nc-Si channel, PECVD silicon nitride gate dielectric, and microcrystalline n+ drain/source contacts. Leakage current of 3.3×10-12 A, switching current ratio of 3×106, and sub threshold swing of 0.51 V/decade were obtained for TFTs with aspect ratio of 1400 µm / 100 µm fabricated at 150°C. The highest electron field effect mobility was found to be 0.3 cm2/V.s observed for TFTs deposited at lower substrate temperature. Measurements showed superior threshold voltage stability of HW nc-Si TFTs over their amorphous silicon (a-Si) counterparts.

Keywords

thin filmplasma-enhanced CVD (PECVD) (deposition)Si
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A20-04
Copyright
Copyright © Materials Research Society 2007

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