Hostname: page-component-745bb68f8f-s22k5 Total loading time: 0 Render date: 2025-01-12T08:02:03.268Z Has data issue: false hasContentIssue false
  • English
  • Français

The Hot Carrier Degradation and Device Characteristics with Variation of Pre-Metal Dielectric Materials

Published online by Cambridge University Press:  10 February 2011

Y. J. Seo ,
W. S. Choi ,
S. Y. Kim ,
C. I. Kim ,
E. G. Chang  and
W. S. Lee
Y. J. Seo
Affiliation:
School of Electrical & Electronic Engineering, Daebul University, Chonnam, 526-890, Korea, [email protected]
W. S. Choi
Affiliation:
School of Electrical & Electronic Engineering, Daebul University, Chonnam, 526-890, Korea, [email protected]
S. Y. Kim
Affiliation:
Department of Electrical Engineering, Chungang Univ., Seoul, 156-756, Korea
C. I. Kim
Affiliation:
Department of Electrical Engineering, Chungang Univ., Seoul, 156-756, Korea
E. G. Chang
Affiliation:
Department of Electrical Engineering, Chungang Univ., Seoul, 156-756, Korea
W. S. Lee
Affiliation:
Department of Electrical Engineering, Chosun Univ., Kwangju, 501-759, Korea
Get access

Abstract

It is very important to select superior interlayer Pre Metal Dielectric (PMD) materials which can act as a penetration barrier to various impurities created by the Chemical Mechanical Polishing (CMP) processes. In this paper, hot carrier degradation and device characteristics were investigated with material variation of PMD-1 layers, which were split by LP-TEOS, SR-oxide, PE-oxynitride, PE-nitride and PE-TEOS films. It was observed that the PE-oxynitride and PEnitride using plasma was greatly deteriorated in hot carrier effect in comparison with silicon oxide. Consequently, it is clearly shown that silicon oxide turned out to be a better PMD-1 material than both PE-oxynitride and PE-nitride. From the results, it is suggested that LP-TEOS film is the best PMD-1 material among the silicon oxide samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 544: Symposium Y – Plasma Deposition and Treatment of Polymers , 1998 , 179
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Webb, Douglas, Sivaram, Siva, Stark, David, Bath, Hubert, Draina, Joseph, Leggett, Robert, and Tolles, Robert, Proc. VMIC, p. 141–148, (1992).Google Scholar
2. Galiano, M., Yieh, E., Robles, S., and Nguyen, B. C., Proc. VMIC, p. 100–106, (1992).Google Scholar
3. Doyle, Brain, Bourcerie, Marc, Marchetaux, Jean-Claude, and Boudou, Alain, IEEE Trans. Elec.Dev., Vol.37, No.3, p.744–754, (1990).Google Scholar
4. Ferreira, Paul, Senez, Vincent, Baccus, Bruno, Varon, Jacques, and Lebailly, Jacques, IEDM-95, p. 503–506, (1995).Google Scholar
5. Jain, Vivek, Pramanik, Dipankar, Nariani, Subhash R., and Chenming Hu, Proc. IRPS, p. 11–15, (1992).Google Scholar