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High-Gain, High-Speed ZnO MSM Ultraviolet Photodetectors

Published online by Cambridge University Press:  03 September 2012

H. Shen ,
M. Wraback ,
C. R. Gorla ,
S. Liang ,
N. Emanetoglu ,
Y. Liu  and
Y. Lu
H. Shen
Affiliation:
US Army Research Laboratory, Sensors and Electron Devices Directorate, AMSRL-SE-EM, Adelphi, MD 20783
M. Wraback
Affiliation:
US Army Research Laboratory, Sensors and Electron Devices Directorate, AMSRL-SE-EM, Adelphi, MD 20783
C. R. Gorla
Affiliation:
Rutgers University, Department of Electrical and Computer Engineering, Piscataway, NJ 08854
S. Liang
Affiliation:
Rutgers University, Department of Electrical and Computer Engineering, Piscataway, NJ 08854
N. Emanetoglu
Affiliation:
Rutgers University, Department of Electrical and Computer Engineering, Piscataway, NJ 08854
Y. Liu
Affiliation:
Rutgers University, Department of Electrical and Computer Engineering, Piscataway, NJ 08854
Y. Lu
Affiliation:
Rutgers University, Department of Electrical and Computer Engineering, Piscataway, NJ 08854
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Abstract

High quality zinc oxide (ZnO) films were epitaxially grown on R-plane sapphire substrates by metalorganic chemical vapor deposition at temperatures in the range 350-600°C. In-situ nitrogen compensation doping was performed using NH3. The metalsemiconductor-metal ultraviolet-sensitive photodetectors were fabricated on nitrogencompensation-doped epitaxial ZnO films. The photoresponsivity of these devices exhibits a linear dependence upon bias voltage up to 10 V, with a photoresponsivity of 400 A/W at 5 V. The rise and fall times are 1 and 1.5 μs, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.16
Copyright
Copyright © Materials Research Society 1999

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