Hostname: page-component-745bb68f8f-cphqk Total loading time: 0 Render date: 2025-01-12T09:53:18.519Z Has data issue: false hasContentIssue false
  • English
  • Français

High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges

Published online by Cambridge University Press:  03 September 2012

A.P. Zhang ,
G. Dang ,
F. Ren ,
X.A. Cao ,
H. Cho ,
E.S. Lambers ,
S.J. Pearton ,
R.J. Shul ,
L. Zhang  and
A.G. Baca
...Show all authors
A.P. Zhang
Affiliation:
Department of Chemical Engineering University of Florida, Gainesville, FL 32611
G. Dang
Affiliation:
Department of Chemical Engineering University of Florida, Gainesville, FL 32611
F. Ren
Affiliation:
Department of Chemical Engineering University of Florida, Gainesville, FL 32611
X.A. Cao
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611
H. Cho
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611
E.S. Lambers
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611
S.J. Pearton
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611
R.J. Shul
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185
L. Zhang
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185
A.G. Baca
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185
R. Hickman
Affiliation:
SVT Associates, Eden Prairie, MN 55344
J.M. Van Hove
Affiliation:
SVT Associates, Eden Prairie, MN 55344
Get access

Abstract

The effects of dc chuck self-bias and high density source power (which predominantly control ion energy and ion flux, respectively) on the electrical properties of n-GaN Schottky diodes exposed to Inductively Coupled Plasma of Cl2/Ar were examined. Both parameters were found to influence the diode performance, by reducing the reverse breakdown voltage and Schottky barrier height. All plasma conditions were found to produce a nitrogen-deficient surface, with a typical depth of the non-stoichiometry being ∼500 Å. Post-etch annealing was found to partially restore the diode characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.66
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Zolper, J.C., “A review of JFETs for high temperature and high power electronics”, Solid-State Electronics, 42, 2153 (1998)Google Scholar
2. Binari, S.C., Redwing, J.M., Kelner, G. and Kruppa, W., “GaN HFETs”, Electron. Lett., 33, 242(1997)Google Scholar
3. Chen, Q., Gaska, R., Khan, M.A., Shur, M.S., Ping, A.T., Adesida, I., Burm, J., Schaff, W.J. and Eastman, L.F., “High performance GaN/AlGaN HFETs” Electron. Lett., 33, 637 (1997)Google Scholar
4. Shur, M.S., “GaN-based transistors for high power applications”, Solid-State Electron. 42, 2131(1998)Google Scholar
5. Wu, Y.F., Keller, B.P., Fini, P., Keller, S., Jenkins, T.J., Kehias, L.T., DenBaars, S.P. and Mishra, U.K., “High Al content AlGaN/GaN MODFETs for ultrahigh performance”, IEEE Electron. Dev. Lett., 19, 50(1998)Google Scholar
6. Balandin, A., Cai, S., Li, R., Wang, K.L., Rao, V.R. and Viswanathan, C.R., “Flicker noise in GaN/AlGaN HFETs”, IEEE Electron. Dev. Lett., 19, 475(1998)Google Scholar
7. Kuksenkov, D.V., Temkin, H., Gaska, R. and Yang, J.W., “Low frequency noise in AlGaN/GaN HFETs”, IEEE, Electron. Dev. Lett., 19, 222(1998)Google Scholar
8. Sullivan, C.J., Chen, M.Y., Higgins, J.A., Yang, J.W., Chen, Q., Pierson, R.L. and McDermott, B.T., “High power 10GHz operation of AlGaN HFETs on insulating SiC”, IEEE, Electron. Dev. Lett., 19, 198(1998)Google Scholar
9. Wetzel, C.E. and Moore, K.E., “SiC and GaN rf power devices”, Mat. Res. Soc. Symp. Proc., 483, 111(1998)Google Scholar
10. Ren, F., Hong, M., S.N.G. Chu, Marcus, M.A., Schurman, M.J., Baca, A.G., Pearton, S.J. and Abernathy, C.R., “Effect of temperature on Ga2O3(Gd2O3)/GaN MOSFETs”, Appl. Phys. Lett., 73, 3893(1998)Google Scholar
11. Ren, F., Abernathy, C.R., J.M. Van Hove, Chow, P.P., Hickman, R., Klaasen, J.J., Kopf, R.F., Cho, H., Jung, K.B., Laroche, J.R., Wilson, R.G., Han, J., Shul, R.J., Baca, A.G. and Pearton, S.J., “300 °C GaN/AlGaN HBT” MRS Internet J. Nitride Semicond. Res., 3, 41(1998)Google Scholar
12. McCarthy, L.S., Kozodoy, P., DenBaars, S.P., Rodwell, M. and Mishra, U.K., 25th Intl. Symp. Compound Semi., Oct. 1998, Nara, Japan Google Scholar
13. Han, J., Baca, A.G., Shul, R.T., Willison, C.G., Zhang, L., Ren, F., Zhang, A.P., Dang, G.T., Donovan, S.M., Cao, X.A., Cho, H., Jung, K.B., Abernathy, C.A., Pearton, S.J. and Wilson, R.G., “Growth and Fabrication of GaN/AlGaN HBT” Appl. Phys. Lett. 74, 2702(1999)Google Scholar
14. Bandic, Z.Z, Bridger, P.M., Piquette, E.C., McGill, T.C., Vaudo, R.P., Phanse, V.M. and Redwing, J.M., “450V GaN rectifiers”, Appl. Phys. Lett., 74, 1266 (1999)Google Scholar
15. Zolper, J.C., Shul, R.T., Baca, A.G., Pearton, S.J., Wilson, R.G. and Shul, R.J., “GaN JFETs”, Appl. Phys. Lett., 68, 273,(1996)Google Scholar
16. Shul, R.J., “Dry etching of GaN”, in GaN and Related Materials, ed. Pearton, S.J. (Gordon and Breach, NY 1997), Chapter 12Google Scholar
17. Ping, A.T., Schmitz, A.C., Adesida, I., Khan, M.A., Chen, Q. and Yang, J., “Characteristics of RIE damage to GaN using Schottky diodes”, J. Electron. Mater., 26, 266(1997)Google Scholar
18. Pearton, S.J., Lee, J.W., MacKenzie, J.D., Abernathy, C.R. and Shul, R.J., “Dry etch damage in InN, InGaN and InAlN”, Appl. Phys. Lett., 67, 2329(1995)Google Scholar
19. Gillis, H.P., Choutov, D.A., Martin, K.P., Bremser, M.D. and Davis, R.F., “Highly anisotropic dry etching of GaN by LE4 in DC plasma”, J. Eletron. Mater., 26, 301(1997)Google Scholar
20. Usikov, A.S., Lundin, W.L., Ushakov, U.I., Pushnyi, B.V., Schmidt, N.M., Zadiranov, J.M. and Shuhtra, T.V., “Electrical and optical properties of GaN after dry etching”, Proc. ECS 98–14, 57(1998)Google Scholar
21. Ping, A.T., Chen, Q., Yang, J.W., Khan, M.A. and Adesida, I., “The effects of RIE damage on ohmic contacts to n-GaN”, J. Electron. Mater., 27, 261(1998)Google Scholar
22. Chen, J.Y., Pan, C.J. and Chi, G.C., “Electrical and optical changes in the near-surface of GaN”, Solid-State Electron., 43, 649(1999)Google Scholar
23. Fan, Z.F., Mohammad, S.N., Kim, W., Aktas, O., Botchkarev, A.E. and Morkoc, H., “Effect of Reactive Ion Etching on ohmic contacts to n-GaN”, Appl. Phys. Lett., 69, 1672(1996)Google Scholar