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Heteroepitaxial Growth of Ba0.5Sr0.5TiO3/SrRuO3 on YSZ/Si by Off-Axis Sputtering

Published online by Cambridge University Press:  15 February 2011

S.Y. Hou ,
J. Kwo ,
R.K. Watts ,
J.-Y. Cheng ,
R.J. Cava ,
W.F. Peck Jr  and
D.K. Fork
S.Y. Hou
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. Kwo
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R.K. Watts
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J.-Y. Cheng
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R.J. Cava
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
W.F. Peck Jr
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
D.K. Fork
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

We demonstrate an epitaxial heterostructure of Ba0.5Sr0.5 TiO3/SrRuO3/YSZ on Si for potential charge storage applications. The dielectric Ba0.5Sr0.5TiO3 (BST) and conductive oxide SrRuO3 are both grown (110) oriented on YSZ (100) buffered Si by 90° off-axis sputtering. These films showed a high degree of crystallinity with minimal interdiffusion at the interfaces as examined by X-ray diffraction, Rutherford backscattering spectroscopy, and cross-section transmission electron microscopy. The in-plane epitaxial alignment of the films is BST/SRO 〈111〉 // YSZ 〈110〉 with a four-fold degeneracy. The dielectric constant and loss tangent of the epi-BST films are 360 and 0.01 at 10 kHz. The leakage current density is < 4×10∼−7 A/cm2 at 1 V. The room temperature dielectric constant (ε) of the BST films shows a roll-off in the 1–10 MHz range. This is attributed to the existence of a series resistance in the measurement circuit, which likely arises from the SrRuO3 electrode.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 99
Copyright
Copyright © Materials Research Society 1995

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References

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