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H-Atom Assisted jet Vapor Deposition of Parylene-n polymer
Published online by Cambridge University Press: 10 February 2011
Abstract
We describe a new approach to deposition of Parylene N thin films. It utilizes a small scale, sonic speed, Jet Vapor DepositionTM (JVDTM) process technology in place of the conventional larger scale, slow flow, Gorham apparatus. It employs a simple but powerful strategy to promote radical polymerization: exposure of the growing film, during deposition, to a high flux of atomic hydrogen. We believe that H atoms have two effects: they clean oxygen from the substrate, and they promote crosslinking in the Parylene film by abstraction of H atoms from the Parylene ring or side groups. With “H atom assisted JVD” Parylene N deposits and adheres even on warm substrates; it has reduced index of refraction and dielectric constant.
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- Copyright © Materials Research Society 1999
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