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Growth temperature - phase stability relation in In1-xGaxN epilayers grown by high-pressure CVD

Published online by Cambridge University Press:  31 January 2011

Goksel Durkaya ,
Mustafa Alevli ,
Max Buegler ,
Ramazan Atalay ,
Sampath Gamage ,
Martin Kaiser ,
Ronny Kirste ,
Axel Hoffmann ,
Muhammad Jamil  and
Ian Ferguson
...Show all authors
Goksel Durkaya
Affiliation:
[email protected], Georgia State University, Department of Physics & Astronomy, Atlanta, Georgia, United States
Mustafa Alevli
Affiliation:
[email protected], Georgia State University, Department of Physics & Astronomy, Atlanta, Georgia, United States
Max Buegler
Affiliation:
[email protected], Georgia State University, Department of Physics & Astronomy, Atlanta, Georgia, United States
Ramazan Atalay
Affiliation:
[email protected], Georgia State University, Department of Physics & Astronomy, Atlanta, Georgia, United States
Sampath Gamage
Affiliation:
[email protected], Georgia State University, Department of Physics & Astronomy, Atlanta, Georgia, United States
Martin Kaiser
Affiliation:
[email protected], Technical University Berlin, Institute of Solid State Physics, Berlin, Berlin, Germany
Ronny Kirste
Affiliation:
[email protected], Technical University Berlin, Institute of Solid State Physics, Berlin, Berlin, Germany
Axel Hoffmann
Affiliation:
[email protected], Technical University Berlin, Institute of Solid State Physics, Berlin, Berlin, Germany
Muhammad Jamil
Affiliation:
[email protected], University of North Carolina at Charlotte, School of ECE, Charlotte, North Carolina, United States
Ian Ferguson
Affiliation:
[email protected], University of North Carolina at Charlotte, School of ECE, Charlotte, North Carolina, United States
Nikolaus Dietz
Affiliation:
[email protected], Georgia State University, Department of Physics & Astronomy, Atlanta, Georgia, United States
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Abstract

The influence of the growth temperature on the phase stability and composition of single-phase In1-xGaxN epilayers has been studied. The In1-xGaxN epilayers were grown by high-pressure Chemical Vapor Deposition with nominally composition of x = 0.6 at a reactor pressure of 15 bar at various growth temperatures. The layers were analyzed by x-ray diffraction, optical transmission spectroscopy, atomic force microscopy, and Raman spectroscopy. The results showed that a growth temperature of 925°C led to the best single phase InGaN layers with the smoothest surface and smallest grain areas

Keywords

epitaxychemical vapor deposition (CVD) (deposition)structural
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1202: Symposium I – III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions , 2009 , 1202-I05-21
Copyright
Copyright © Materials Research Society 2010

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