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Growth of Thin Epitaxial Silicon Layers on Heavily Doped Substrates by RTP-CVD

Published online by Cambridge University Press:  25 February 2011

S. K. Lee ,
Y. H. Ku  and
D. L. Kwong
S. K. Lee
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
Y. H. Ku
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
D. L. Kwong
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
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Abstract

Silicon epitaxy plays an important role in improving the performance and reliability of semiconductor devices. The continuous scale-down in device feature size demands a low thermal budget epitaxial technique to maintain the structural integrity of processed devices. In this paper, rapid thermal processing chemical vapor deposition (RTP-CVD) has been used to deposit high quality, thin silicon epitaxial films with superior thickness control. Parameters affecting the quality and rate of epitaxial growth are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 127
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

[1]. Bean, K. E., Runyan, W. R., and Massey, R. G., Semiconductor International, 136, May, 1985.Google Scholar
[2]. Donahue, T. J. and Reif, R., J. Appl. Phys., 57, 2757, 1985.CrossRefGoogle Scholar
[3]. Sugii, T., Yamazaki, T., Fukano, T., and Ito, T., IEEE Electron Dev. Lett., 528, 1987.Google Scholar
[4]. Meyerson, B. S., LeGoues, F. K., Nguyen, T. N., and Harame, D. L., Appl. Phys. Lett., 50, 113, 1987.CrossRefGoogle Scholar
[5]. Gibbons, J. F., Gronet, C. M., and Williams, K. E., Appl. Phys. Lett., 47, 721, 1985.CrossRefGoogle Scholar
[6]. Gronet, C. M., Sturm, J. C., Williams, K. E., Gibbons, J. F., and Wilson, S. D., Appl. Phys. Lett., 48, 1012, 1986.CrossRefGoogle Scholar
[7]. Kern, W. and Puotinen, D., RCA Review, 187, 1970.Google Scholar
[8]. Bloem, J. and Claassen, W., Philips Tech. Rev., 60, 1984.Google Scholar