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Growth of Lattice-Matched ZnSe-ZnS Strained-Layer Superlattices Onto GaAs as An Alternative to ZnSSe Alloys

Published online by Cambridge University Press:  21 February 2011

H. Oniyama ,
S. Yamaga  and
A. Yoshikawa
H. Oniyama
Affiliation:
Department of Electrical and Electronics Engineering, Faculty of Engineering, Chiba University, 1-33, Yayoi-cho, Chiba 260
S. Yamaga
Affiliation:
Department of Electrical and Electronics Engineering, Faculty of Engineering, Chiba University, 1-33, Yayoi-cho, Chiba 260
A. Yoshikawa
Affiliation:
Department of Electrical and Electronics Engineering, Faculty of Engineering, Chiba University, 1-33, Yayoi-cho, Chiba 260
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Abstract

This paper describes the results of the first attempt to reduce misfit dislocations in epilayers of a wide bandgap II-VI semiconductor on GaAs substrates by utilizing the ZnSe-ZnS strained-layer superlattice (SLS) structure. From a theoretical calculation, SLSs consisting of a 200A-ZnSe and a IOA-ZnS layer in one period can be grown as lattice-matched films to GaAs substrates. It has been found from the photoluminescence measurements and electron-beam-induced-current (EBIC) image observations that the generation of misfit dislocations can be markedly reduced, as expected.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 187
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Fujita, Sz., Terada, K., Skamoto, T. and Fujita, Sg., J. Cryst. Growth 94, 102 (1989)Google Scholar
2. Mitsuhashi, H., Mitsuishi, J. and Kukimoto, H., Jpn. J. Appi. Phys., 24, L864 (1985)Google Scholar
3. Matsumura, N., Ishikawa, k., Saraie, J. and Yodogawa, Y., J. Cryst. Growth, 72, 41 (1985)Google Scholar
4. Fujita, S., Matsuda, Y. and Sasaki, A., J. Cryst. Growth, 68, 231 (1984)Google Scholar
5. Yoshikawa, A., Oniyama, H., Yasuda, H., Yamaga, S. and Kasai, H., J. Cryst. Growth 94, 69 (1988)Google Scholar
6. Oniyama, H., Yamaga, S., Yoshikawa, A. and Kasai, H., J.Cryst. Growth 93, 679 (1988)Google Scholar
7. Matthews, J.W. and Blakeslee, A.E., J. Cryst. Growth 32, 265 (1975)Google Scholar
8. Yokogawa, T., Sato, H. and Ogura, M., Appl. Phys. Lett., 52, 1678 (1988)Google Scholar
9. Matsumoto, T., Iijima, T. and Ishida, T., Jpn. J. Appl. Phys., 27, L892 (1988)Google Scholar
10. Mistuhashi, H., Mitsuishi, I., Mizuta, M. and Kukimoto, H., Jpn. J. Appl. Phys, 24, L578 (1985)Google Scholar
11. Shinohara, M., Ito, T., Yamada, K. and Imamura, Y., Jpn. J. Appl. Phys., 24, L818 (1985)Google Scholar