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Gas Sensor Based on the Network of SnO2 Semiconducting Nanowires

Published online by Cambridge University Press:  01 February 2011

Young-Jin Choi
Affiliation:
[email protected], Korea Institute of Science and Technology, Materials Science and Technology Division, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, 130-650, Korea, Seoul, 130-650, Korea, Republic of, 82-2-958-5504, 82-2-958-5489
In-Sung Hwang
Affiliation:
[email protected], Korea Institute of Science and Technology, Materials Science and Technology Division, P.O. Box 131, Cheongryang, Seoul, 130-650, Korea, Republic of
Kyoung-Jin Choi
Affiliation:
[email protected], Korea Institute of Science and Technology, Materials Science and Technology Division, P.O. Box 131, Cheongryang, Seoul, 130-650, Korea, Republic of
Jae-Hwan Park
Affiliation:
[email protected], Chungju National University, Department of Electronic Engineering, Chungju, 380-702, Korea, Republic of
Jae-Gwan Park
Affiliation:
[email protected], Korea Institute of Science and Technology, Materials Science and Technology Division, P.O. Box 131, Cheongryang, Seoul, 130-650, Korea, Republic of
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Abstract

A simple and efficient way of preparing highly sensitive SnO2 nanowire-based gas sensors without an arduous lithography process was studied. The network of SnO2 nanowires could be suspended upon the Si substrate by separating the Au catalyst layer from the substrate. As the electric current is transported along the networks of the nanowires, not along the bottom layer on the substrate, the sensitivity to gases was maximized in the suspended and networked structures. The sensitivities were 18 and 180 when the NO2 concentrations were 0.5 and 5 ppm. The response time was typically 20-50 s.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

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