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Gas Selectivity of Polycrystalline Thick Films of SrPb1−xBixO3−δ

Published online by Cambridge University Press:  01 February 2011

Carlos R. Michel ,
Gloria Santillán ,
Abraham Quino  and
Arturo Chávez
Carlos R. Michel
Affiliation:
Departamento de Física, CUCEI, Universidad de Guadalajara, Blvd. Marcelino G.Barragán 1421, Guadalajara, Jalisco 44430, México.
Gloria Santillán
Affiliation:
Departamento de Física, CUCEI, Universidad de Guadalajara, Blvd. Marcelino G.Barragán 1421, Guadalajara, Jalisco 44430, México.
Abraham Quino
Affiliation:
Departamento de Física, CUCEI, Universidad de Guadalajara, Blvd. Marcelino G.Barragán 1421, Guadalajara, Jalisco 44430, México.
Arturo Chávez
Affiliation:
Departamento de Física, CUCEI, Universidad de Guadalajara, Blvd. Marcelino G.Barragán 1421, Guadalajara, Jalisco 44430, México.
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Abstract

Polycrystalline samples of the perovskites: SrPb1−xBixO3−δ (x = 0, 0.1) were prepared from the dissolution of stoichiometric amounts of Sr(NO3), Pb(NO3)2 and Bi(NO3)3 in aqueous media. The solutions were heat-dried at 75°C obtaining powder precursors. To determine the temperature of formation of these phases, thermal analyses were made on them. Calcination at 650°C for 6 h produced pure samples, which were characterized by X-ray powder diffraction. The surface microstructure of powders was analyzed by scanning electron microscopy, and showed that this preparation procedure yield micron-sized particles, which formed agglomerations. To evaluate their gas sensing behavior, the resulting powders were finely ground and mixed with acetone to form thick-films. The electrical conductivity vs. temperature of films was measured in dry air, O2 and CO2, and resulted that SrPb0.9Bi0.1O3−δ has a better sensitivity to O2 compared to SrPbO3−δ, caused by the partial substitution of lead by bismuth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 828: Symposium A – Semiconductor Materials for Sensing , 2004 , A5.2
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Mandelis, A. and Christofides, C., Physics, Chemistry and Technology of Solid State Gas Sensor Devices, (Wiley-Interscience, New York, 1993), pp. 10–27.Google Scholar
2. Kanazawa, E., Sakai, G., Shimanoe, K., Kanmura, Y., Teraoka, Y., Miura, N. and Yamazoe, N., Electrochem. Solid State Lett. 3 (12), 572 (2000).Google Scholar
3. Shimizu, Y. and Egashira, M., Mater. Res. Soc. Bull. 6, 18 (1999).Google Scholar
4. Kosacki, I. and Anderson, H.U.. Sens. Actuators B. 48, 263 (1998).Google Scholar
5. Yoon, J.W., Grilli, M.A., DiBartolomeo, E., Pollini, R. and Traversa, E.. Sens. Actuators B. 76, 483 (2001).Google Scholar
6. Carotta, M.C., Martinelli, G., Crema, L., Malagu, C., Merli, M., Ghiotti, G. and Traversa, E.. Sens. Actuators B. 76, 336 (2001).Google Scholar
7. Tunney, J.J., Post, M.L., Du, X. and Yang, D., J. Electrochem. Soc. 149 (6), H113 (2002).Google Scholar
8. Wang, Z.L., Functional and Smart Materials, (Kluwer, Dordrecht, 1998), pp.130–132.Google Scholar
9. Michel, C.R., Gago, A.S., Guzmán-Colín, H., López-Mena, E.R. and Lardizábal, D., Mater. Res. Bull. 39, 2295 (2004).Google Scholar