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Gaas Etching by C12 and HCI: Ga- vs. As- Limited Etching

Published online by Cambridge University Press:  22 February 2011

Chaochin Su ,
Zi-Guo Dai ,
Hui-Qi Hou ,
Ming Xi ,
Matthew F. Vernon  and
Brian E. Bent
Chaochin Su
Affiliation:
Department of Chemistry, Columbia University, New York, Ny 10027
Zi-Guo Dai
Affiliation:
Department of Chemistry, Columbia University, New York, Ny 10027
Hui-Qi Hou
Affiliation:
Department of Chemistry, Columbia University, New York, Ny 10027
Ming Xi
Affiliation:
Department of Chemistry, Columbia University, New York, Ny 10027
Matthew F. Vernon
Affiliation:
Department of Chemistry, Columbia University, New York, Ny 10027
Brian E. Bent
Affiliation:
Department of Chemistry, Columbia University, New York, Ny 10027
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Abstract

Results in the literature indicate that C12 etches GaAs at room temperature but HCl etches GaAs at a measurable rate only at temperatures above ∼670 K. In this work, molecular beam scattering and surface analysis techniques have been applied to address the fundamental kinetic differences between these two systems. The results indicate that the onset of GaAs etching by C12 is determined by the kinetics of Ga-removal as GaC13 while etching by HCl is limited by As evaporation as As2. The results also suggest that HCl selectively etches gallium from GaAs at temperatures between 600 and 650 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 413
Copyright
Copyright © Materials Research Society 1994

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References

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