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Formation of Buried Layers of (SiC)1-x(AINT)x in 6H-SiC Using Ion-Beam Synthesis

Published online by Cambridge University Press:  03 September 2012

R. A. Yankov ,
N. Hatzopoulos ,
W. Fukarek ,
M. Voelskow ,
V. Heera ,
J. Pezoldt  and
W. Skorupa
R. A. Yankov
Affiliation:
Institute of Ion beam Physics and Materials Research, Research Centre Rossendrof Inc., POB 510119, 01314 Dresden, Genmany Institute of Solid State Electronics, Technical University of Ilmenau, POB 100565, 98684 Ilmenau, Germany yankov@fz-rossendorf de
N. Hatzopoulos
Affiliation:
Institute of Ion beam Physics and Materials Research, Research Centre Rossendrof Inc., POB 510119, 01314 Dresden, Genmany
W. Fukarek
Affiliation:
Institute of Ion beam Physics and Materials Research, Research Centre Rossendrof Inc., POB 510119, 01314 Dresden, Genmany
M. Voelskow
Affiliation:
Institute of Ion beam Physics and Materials Research, Research Centre Rossendrof Inc., POB 510119, 01314 Dresden, Genmany
V. Heera
Affiliation:
Institute of Ion beam Physics and Materials Research, Research Centre Rossendrof Inc., POB 510119, 01314 Dresden, Genmany
J. Pezoldt
Affiliation:
Institute of Solid State Electronics, Technical University of Ilmenau, POB 100565, 98684 Ilmenau, Germany
W. Skorupa
Affiliation:
Institute of Ion beam Physics and Materials Research, Research Centre Rossendrof Inc., POB 510119, 01314 Dresden, Genmany
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Abstract

Solid solutions of SiC and III-V compound semiconductors are recognized as promising materials for novel semiconductor applications. This paper reports on experiments which explore the possibility of synthesizing thin buried layers of (SiC)l-x(AIN)x having composition of about x = 0.2 by co-implanting N+ and Al+ ions into 6H-SiC wafers maintained at temperatures in the range 200 - 800°C. Structural and compositional evaluation of as-implanted samples was carried out using a combination of Rutherford backscattering/channelling spectrometry and infrared reflectance spectroscopy. It is shown that the structures are highly sensitive to the substrate temperature. The use of sufficiently high temperatures (400 - 800°C) enables the crystallinity of the host material as well as relatively low damage levels to be maintained during implantation. The formation of AI-N bonds within the implanted layers is also confirmed over the temperature range studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 271
Copyright
Copyright © Materials Research Society 1997

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