Article contents
Formation of A Buried Stacked Insulator by Ion Beam Synthesis
Published online by Cambridge University Press: 28 February 2011
Abstract
We report on the formation and properties of a new type of a buried insulator using combined nitrogen/oxygen implantation with two different implantation energies. In this manner, a stacked layer consisting of silicon dioxide above silicon oxynitride above silicon nitride is formed. Experimental results concerning the impurity profiles, the microstructure and compound formation are presented.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1992
References
REFERENCES
- 1
- Cited by