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Fabrication of Transparent Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Operation
Published online by Cambridge University Press: 26 February 2011
Abstract
We demonstrate transparent thin film transistors (TFTs) with nonvolatile memory operation using Bi4-xLaxTi3O12 (BLT) as a gate insulator and indium tin oxide (ITO) as a channel. ITO is also used for the gate, source and drain electrodes. Drain current-drain voltage (ID-VD) characteristics of transparent ITO/BLT ferroelectric-gate TFTs exhibit excellent n-channel transistor operations. On current of 0.35 mA was obtained when the applied gate voltage is 6V. On the other hand, the off current of the device is as low as 10-10A, which indicates that the ITO channel is sufficiently depleted by the ferroelectric polarization. In addition, drain current-gate voltage (ID-VG) characteristics demonstrate clear counterclockwise hysteresis loop due to the ferroelectric gate insulator. Optical transmittance of the fabricated device is greater than 60% including the quartz substrate.
Keywords
- Type
- Research Article
- Information
- MRS Online Proceedings Library (OPL) , Volume 902: Symposium T – Ferroelectric Thin Films XIII , 2005 , 0902-T10-54
- Copyright
- Copyright © Materials Research Society 2006
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