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The Fabrication of High-Speed Electronic Devices by Ion-Beam Synthesis of GexSi1-x Strained Layers

Published online by Cambridge University Press:  03 September 2012

R. G. Elliman ,
H. Jiang ,
W. C. Wong  and
P. Kringhøj
R. G. Elliman
Affiliation:
Electronic Materials Engineering Department, R.S.Phys. S.E., Institute of Advanced Study, Australian National University, Canberra, ACT 0200.
H. Jiang
Affiliation:
Electronic Materials Engineering Department, R.S.Phys. S.E., Institute of Advanced Study, Australian National University, Canberra, ACT 0200.
W. C. Wong
Affiliation:
Electronic Materials Engineering Department, R.S.Phys. S.E., Institute of Advanced Study, Australian National University, Canberra, ACT 0200.
P. Kringhøj
Affiliation:
Electronic Materials Engineering Department, R.S.Phys. S.E., Institute of Advanced Study, Australian National University, Canberra, ACT 0200.
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Abstract

GexSi1-x, strained layers can be fabricated by Ge implantation and solid-phase epitaxy and can be used in electronic devices to improve their performance. Several important materials science issues are addressed, including the effect of the strain on solid-phase-epitaxy, the effect of oxidation on the implanted Ge distribution, and the effect of Ge on the oxidation rate of Si. The potential of this process is demonstrated by comparing the performance of metal-oxidesemiconductor field-effect-transistors (MOSFETs) employing ion-beam synthesised GeSi strained layer channel regions with that of Si-only devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 217
Copyright
Copyright © Materials Research Society 1997

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