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Experimental Studies of Photoluminescence in Mn-Ion Implanted Silicon Rich Oxide Thin Film

Published online by Cambridge University Press:  01 February 2011

Wei Pan ,
R.G. Dunn ,
M.S. Carroll  and
Y.Q. Wang
Wei Pan
Affiliation:
[email protected], Sandia National Labs, Semiconductor Material and Device Sciences, P.O. Box 5800, MS 1086, Albuquerque, New Mexico, 87185, United States
R.G. Dunn
Affiliation:
[email protected], Sandia National Laboratories, Albuquerque, New Mexico, 87185, United States
M.S. Carroll
Affiliation:
[email protected], Sandia National Laboratories, Albuquerque, New Mexico, 87185, United States
Y.Q. Wang
Affiliation:
[email protected], Los Alamos National Laboratory, Materials Science and Technology Division, Los Alamos, New Mexico, 87545, United States
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Abstract

In this paper, we wish to report our preliminary experimental results from the photoluminescence (PL) studies in a Mn-ion implanted silicon-rich oxide (SRO) thin film. At 4 K, a broad PL peak, centered at ~ 1.2 eV, was observed. It is blue-shifted from the Si substrate peak at ~ 1.1 eV. The temperature (T) dependence of PL was carried out at zero magnetic (B) field and B = 0.5 Tesla, respectively, and showed quantitatively different behaviors. At B = 0, the PL intensity increases very slowly at low temperatures and reaches a maximal value at ~ 40 K. It then decreases as T is further increased. At B = 0.5 Tesla, the peak temperature (Tpeak), whether the intensity is maximal, moves to ~ 80-100 K, and the decreasing rate beyond Tpeak is much smaller than that at B = 0. We speculate that these two different behaviors might reveal, possibly, a ferromagnetic ordering in Mn-ion doped silicon nanocrystals.

Keywords

luminescencenanostructureferromagnetic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A08-08
Copyright
Copyright © Materials Research Society 2006

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