Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-02T19:01:11.919Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial Growth of C60 Thin Films using Continuous-wave Laser Molecular Beam Epitaxy

Published online by Cambridge University Press:  26 February 2011

Seiichiro Yaginuma ,
Kenji Itaka ,
Masamitsu Haemori ,
Masao Katayama ,
Yuji Matsumoto  and
Hideomi Koinuma
Seiichiro Yaginuma
Affiliation:
[email protected], The University of Tokyo, Department of Advanced Materials Science, Graduate School of Frontier, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8568, Japan, 81-4-7136-4485, 81-4-7136-4485
Kenji Itaka
Affiliation:
[email protected], The University of Tokyo, Graduate school of Frontier Sciences, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8568, Japan
Masamitsu Haemori
Affiliation:
[email protected], NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan
Masao Katayama
Affiliation:
[email protected], Tokyo Institute of Technology, Materials and Structures Laboratory, 4259 Nagatsuta, Midori-ku, Yokohama, Kanagawa, 226-8503, Japan
Yuji Matsumoto
Affiliation:
[email protected], Tokyo Institute of Technology, Materials and Structures Laboratory, 4259 Nagatsuta, Mid ori-ku, Yokohama, Kanagawa, 226-8503, Japan
Hideomi Koinuma
Affiliation:
[email protected], The University of Tokyo, Graduate school of Frontier Sciences, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8568, Japan
Get access

Abstract

We have fabricated C60 thin films on various substrates (mica, MoS2, HOPG, LiF, NaCl, KBr, KCl and CaF2) by using continuous-wave laser molecular beam epitaxy (CWL-MBE), which is very suitable technique to grow epitaxial organic thin films because of good controllability of evaporation as compared with Knudsen-cell method. The films were evaluated by reflection high-energy electron diffraction with micro channel imaging plate (MCP-RHEED) and atomic force microscopy (AFM). AFM images of the C60 films on mica, MoS2 and HOPG substrates show flat and homogeneous, morphology, and epitaxial growth of the films on mica and MoS2 substrates were observed by RHEED. This result shows mica, MoS2, HOPG substrates are good candidates for epitaxial growth of C60 thin films.

Keywords

laser ablationthin filmepitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 965: Symposium S – Organic Electronics – Materials, Devices and Applications , 2006 , 0965-S14-06
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yaginuma, S., Yamaguchi, J., Haemori, M., Itaka, K., Matsumoto, Y., Kondo, M. and Koinuma, H., J. Phys. Conf. Ser. (in press)Google Scholar
2. Saiki, K., Kono, T., Ueno, K. and Koma, A., Rev. Sci. Inst. 71, 3478 (2000)Google Scholar
3. Tanigaki, K., Kuroshima, S. and Ebbesen, T. W., Thin Solid Films 257, 154 (1995)Google Scholar