Hostname: page-component-745bb68f8f-mzp66 Total loading time: 0 Render date: 2025-01-12T09:20:05.573Z Has data issue: false hasContentIssue false
  • English
  • Français

Emission at 247 nm from GaN Quantum Wells Grown by MOCVD

Published online by Cambridge University Press:  03 September 2012

Takao Someya ,
Katsuyuki Hoshino ,
Janet C. Harris ,
Koichi Tachibana ,
Satoshi Kako  and
Yasuhiko Arakawa
Takao Someya
Affiliation:
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan
Katsuyuki Hoshino
Affiliation:
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan
Janet C. Harris
Affiliation:
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan
Koichi Tachibana
Affiliation:
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan
Satoshi Kako
Affiliation:
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan
Yasuhiko Arakawa
Affiliation:
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan
Get access

Abstract

Photoluminescence (PL) spectra were measured at room temperature for GaN quantum wells (QWs) with Al0.8Ga0.2N barriers, which were grown by atmospheric-pressure metal organic chemical vapor deposition (MOCVD). The thickness of the GaN QW layers was systematically varied from one monolayer to four monolayers. We clearly observed a PL peak at a wavelength as short as 247 nm (5.03 eV) from one monolayer-thick QWs. The effective confinement energy is as large as 1.63 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W12.8
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nakamura, S., Science 281, 956 (1998)Google Scholar
2. Nakamura, S. and Fasol, G., The Blue Laser Diode (Springer, Berlin, 1997).Google Scholar
3. Langer, R., Simon, J., Ortiz, V., Pelekanos, N. T., Barski, A., Andre, R., and Godlewski, M., Appl. Phys. Lett. 74, 3827 (1999)Google Scholar
4. Gil, B., Lefebvre, P., Allegre, J., and Mathieu, H., Grandjean, N., Leroux, M., and Massies, J., Bigenwald, P., and Christol, P., Phys. Rev. B 59, 10246 (1999)Google Scholar
5. Zeng, K. C., Mair, R., Lin, J. Y., Jiang, H. X., Chow, W. W., Botchkarev, A., and Morkoc, H., Appl. Phys. Lett. 73, 2476 (1998)Google Scholar
6. Im, J., Kollmer, H., Off, J., Sohmer, A., Scholz, F., and Hangleiter, A., Phys. Rev. B57, R9435 (1998).Google Scholar
7. Kim, H. S., Lin, J. Y., Jiang, H. X., Chow, W. W., Botchkarev, A., and Morkoc, H., Appl. Phys. Lett. 73, 3426 (1998)Google Scholar
8. Zeng, K. C., Lin, J. Y., Jiang, H. X., Salvador, A., Popovici, G., Tang, H., Kim, W., and Morkoc, H., Appl. Phys. Lett. 71, 1368 (1997)Google Scholar
9. Smith, M., Lin, J. Y., Jiang, H. X., Salvador, A., Botchkarev, A., Kim, W., and Morkoc, H., Appl. Phys. Lett. 69, 2453 (1996)Google Scholar
10. Lefebvre, P., Allegre, J., Gil, B., and Mathieu, H., Grandjean, N., Leroux, M., and Massies, J., and Bigenwald, P., Phys. Rev. B 59, 15363 (1998)Google Scholar
11. Salvador, A., Liu, G., Kim, W., Aktas, O., Botchkarev, A., and Morkoc, H., Appl. Phys. Lett. 67, 3322 (1995)Google Scholar
12. Smith, M., Lin, J. Y., Jiang, H. X., Khan, A., Chen, Q., Salvador, A., Botchkarev, A., Kim, W., and Morkoc, H., Appl. Phys. Lett. 70, 2882 (1997)Google Scholar
13. Grandjean, N. and Massies, J., Appl. Phys. Lett. 73, 1260 (1998)Google Scholar
14. Hirayama, H. and Aoyagi, Y., MRS Internet J. Nitride Semicond. Res. 4S1, G3.74 (1999).Google Scholar
15. Hirayama, H. and Aoyagi, Y., 2nd Int. Symp. on Blue Lasers and Light Emitting Diodes, Chiba, 1998, Paper Tu-P42.Google Scholar