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Electrochemical synthesis of a ZnO nanowire field-effect transistor

Published online by Cambridge University Press:  01 February 2011

Travis Lee Wade
Travis Lee Wade*
Affiliation:
[email protected], ECOLE Polytechnique, Laboratoire des Solides Irradies, Route de Saclay, Palaiseau, 91128, France, 00 33 (0)1 33 33 39 98, 00 33 (0)1 33 33 30 20
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Abstract

Aluminum wires are electrochemically sculptured into bi-directional templates for the growth and contacting of nanowires as three terminal devices. The utility of this nanostructured micro-template is demonstrated by a ZnO nanowire surrounding gate field-effect transistor. This bottom-up approach to a 3-D nanowire transistor is unique in that it can be almost entirely fabricated in a beaker using aqueous, room-temperature electrochemistry.

Keywords

self-assemblyelectrodepositionnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 951: Symposium E – Nanofunctional Materials, Nanostructures and Novel Devices for Biological and Chemical Detection , 2006 , 0951-E08-05
Copyright
Copyright © Materials Research Society 2007

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