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Electrical Study of Ferromagnet Metal Gate MOS Diode: Towards a Magnetic Memory Cell Integrated on Silicon

Published online by Cambridge University Press:  01 February 2011

Mehdi Kanoun ,
Rabia Benabderrahmane ,
Christophe Duluard ,
Claire Baraduc ,
Nicolas Bruyant ,
Hérvé Achard  and
Ahmad Bsiesy
Mehdi Kanoun
Affiliation:
[email protected], CEA, SPINTEC, 17 rue des Martyrs, GRENOBLE Cedex 9, Grenoble, 38054, France
Rabia Benabderrahmane
Affiliation:
[email protected], CEA/SPINTEC, 17 rue des Martyrs, Grenoble, 38054, France
Christophe Duluard
Affiliation:
[email protected], CEA/SPINTEC, 17 rue des Martyrs, Grenoble, 38054, France
Claire Baraduc
Affiliation:
[email protected], CEA/SPINTEC, 17 rue des Martyrs, Grenoble, 38054, France
Nicolas Bruyant
Affiliation:
[email protected], CEA/SPINTEC, 17 rue des Martyrs, Grenoble, 38054, France
Hérvé Achard
Affiliation:
[email protected], CEA/lETI, 17 rue des Martyrs, Grenoble, 38054, France
Ahmad Bsiesy
Affiliation:
[email protected], CEA/SPINTEC, 17 rue des Martyrs, Grenoble, 38054, France
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Abstract

This work focuses on electrical characterisation of NiFe/SiO2/Si diodes that can be used as spin injection into silicon for future spintronic devices. Capacitance-voltage characteristics show a large increase of the Si/SiO2 interfacial state density compared to Al/SiO2/Si diodes. This result suggests that nickel and/or iron may have diffused across the SiO2 layer. Consistently the current-voltage experimental characteristics can be accounted for by using trap assisted electron transport mechanism. These traps may be attributed to ferromagnet atoms in the oxide bulk.

Keywords

dielectricelectrical propertiesferromagnetic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I09-04-J07-04
Copyright
Copyright © Materials Research Society 2007

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References

[1] Freescale Semiconductor Inc.,"http://www.eetimes.com/news/semi/showArticle.jhtml?articleID=190301247"Google Scholar
[2] Safarov, V., Patent FR2,849,526 (2004).Google Scholar
[3] Hanbicki, A.T., Jonker, B.T., Itskos, G., Kioseoglou, G., Petrou, A., Appl. Phys. Lett. 80 (7) (2002) 1240.Google Scholar
[4] Wolf, S.A., Awschalom, D.D., Buhrman, R.A., Daughton, J.M., Svon-Molnar, ., Roukes, M.L., Chtchelkanova, A.Y., Treger, D.M., Science 294 (5546) (2001) 1488–1495.Google Scholar
[5] Motsnyi, V.F., Boeck, J. De, Das, J., Roy, W. Van, Borghs, G., Goovaerts, E.,Safarov, V.I., Appl. Phys. Lett. 81 (2) (2002) 265.Google Scholar
[6] Fert, A., Jaffr'es, H., Phys. Rev. B 64 (2001) 184420.Google Scholar
[7] Schmidt, G., Ferrand, D., Molenkamp, L.W., Filip, A.T., Wees, B.J. Van, Phys. Rev. B 62 (8) (2000) R4790 Google Scholar
[8] Rashba, I., Phys. Rev. B 62 (24) (2000) R16267 Google Scholar
[9] Zerbst, M., "Relaxation effects at semiconductor–insulator interfaces" (in German), Z. Angew. Phys., vol. 22, pp. 30–33, May 1966.Google Scholar
[10] Muller, J. and Schiek, B., "Transient responses of a pulsed MIS capacitor," Solid-state Electron., vol. 13, pp. 1319–1332, Oct. 1970.Google Scholar
[11] Nicollian, E. H., J. R. Brews MOS (Metal Oxide Semiconductor) Physics and Technology, Wiley-Interscience, New York (1982)Google Scholar
[12] Gerardi, G. J., Poindexter, E. H., Caplan, P. J. et Johnson, N. M., «Interface traps and Pb centers in oxidized (100)", Appl. Phys. Lett., 1986, Vol. 49, no 6,, pp. 348–350.Google Scholar
[13], Agarwal, Seshadri, A.K., Rowland, S., B, L.. "Temperature dependence of Fowler Nordheim current in 6H- and 4H-SiCMOS capacitors" Electron Device Letters, IEEE 1997 Vo: 18, Issue: 12 pp: 592–594 Google Scholar
[14] Chiou, Y. L., Gambino, J. P. and Mohammad, M. "Determination of the Fowler–Nordheim tunneling parameters from the FowlerñNordheim plot" Solid-State Electronics Vo 45, Issue 10, October 2001, pp 1787–1791 Google Scholar
[15] Electrical characterization of copper penetration effects in silicon dioxide J. Cluzel, Mondon, F., Blachier, D., Morand, Y., G. Reimbold IEEE international reliability physics symposium proceedings 2002, pp. 431–432 Google Scholar
[16] Maiti, C. K., Dalapati, G. K., Chatterjee, S., Samanta, S. K., Varma, S. and Patil, S. "Electrical properties of high permittivity ZrO2 gate dielectrics on strained-Si" Solid-State Electronics Vol 48, Issue 12, 2004, pp 2235–2241 Google Scholar