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Effects of Nitrogen Reactive Species on Germanium Plasma Nitridation Processes

Published online by Cambridge University Press:  01 February 2011

Takuya Sugawara ,
Raghavasimhan Sreenivasan  and
Paul C. McIntyre
Takuya Sugawara
Affiliation:
[email protected], Tokyo Electron America Inc., Technology Development Center, 2953 Bunker Hill Lane, Suite 300, Santa Clara, California, 95054, United States, 408-398-4753
Raghavasimhan Sreenivasan
Affiliation:
[email protected], Stanford University, Dept. of Materials Science and Engineering, 476 Lomita Mall, McCullough Bldg., Stanford, California, 94305, United States
Paul C. McIntyre
Affiliation:
[email protected], Stanford University, Dept. of Materials Science and Engineering, 476 Lomita Mall, McCullough Bldg., Stanford, California, 94305, United States
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Abstract

Roles of reactive species of germanium and silicon plasma nitridation were investigated by comparing nitrogen plasma chemistry and oxynitride layer physical properties. In high pressure remote plasma nitridation process, hydrogen containing neutral radicals (NH* and H*) were important to nitride germanium and silicon substrates. This process required high substrate temperature to nitride germanium substrate, whereas silicon substrates could be nitrided at low substrate temperature. In low pressure RLSA plasma nitridation process, N2+ ion species acted as dominant reactive species. Using this process, germanium could be nitrided at low substrate temperature without hydrogen and high nitrogen concentration (~22at.%) GeON was obtained.

Keywords

Genitrideplasma-enhanced CVD (PECVD) (chemical reaction)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 917: Symposium E – Gate Stack Scaling – Materials Selection, Role of Interfaces, and Reliability Implications , 2006 , 0917-E01-02
Copyright
Copyright © Materials Research Society 2006

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