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Effects of CF4, Reactive ion Etching on Si-Doped Al0.2Ga0.8As

Published online by Cambridge University Press:  10 February 2011

Akira Ito ,
Atsuyoshi Sakai  and
Yutaka Tokuda
Akira Ito
Affiliation:
Department of Electronic and Information Engineering, Suzuka National College of Technology, Shiroko, Suzuka 510-0294, Japan, [email protected]
Atsuyoshi Sakai
Affiliation:
Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-0392, Japan
Yutaka Tokuda
Affiliation:
Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-0392, Japan
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Abstract

Effects of CF4 reactive ion etching on electrical characteristics of Si-doped Al0.2Ga0.8As layers were studied with capacitance-voltage and deep level transient spectroscopy measurements. Plasma exposure for about 30 s drastically degrades the electrical characteristics. Post-annealing at 360 °C for 20 s partially recovers the carrier concentrations. After the post-annealing, some electron traps were observed. Two of the traps show bi-stability. The concentrations of the two traps increase with forward bias temperature annealing and decrease with reverse bias temperature annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 535: Symposium D/I – III-V and IV-IV Materials & Processing Challenges for Highly… , 1998 , 243
Copyright
Copyright © Materials Research Society 1999

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References

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