Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-25T03:56:26.927Z Has data issue: false hasContentIssue false

Effect of Rare-Earth Cation Doping on Enhancement of The Thermoelectric Power of Zinc Oxide

Published online by Cambridge University Press:  01 February 2011

Kiyoshi Fuda
Affiliation:
[email protected], Akita University, Tegatagakuen-Cho 1-1, Akita, Akita, 010-8502, Japan
Shigeaki Sugiyama
Affiliation:
Get access

Abstract

We investigated the effects of doping of rare-earth ions (Ce, Pr, Nd, Sm, and Eu) on the thermoelectric properties of ZnO, especially Seebeck coefficient in the temperature range from 100 to 800 °C. The data were scattered more or less depending on the doping species, but it was commonly found that the rare-earth doped samples showed higher Seebeck coefficients with compared to those for Al-doped samples. The highest values were observed for Nd-doped one ranging from -360 to -400μVK−1 in the temperature range observed, the lowest ones for Pr-doped one ranging from -250 to -310 μVK−1, whereas those for Al-doped one ranging from -80 to -140 μVK−1. It should also be pointed out that the power factor at 100 °C for Pr-doped ZnO was twice or more as much as that for Al-doped one. From the results it seemed that rare earth doping is effective for enhancement of thermoelectric power of ZnO.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ohtaki, M., Tsubota, T., Eguchi, K., and Arai, H., “High-temperature thermoelectric properties of (Zn1-xAlx)O”, J. Appl. Phys. 79, 1816 (1996)Google Scholar
2. Tsubota, T., Ohtaki, M., Eguchi, K. and Arai, H., “Thermoelectric properties of Al-doped ZnO as a promising oxide material for high-temperature thermoelectric conversion”, J. Marer. Cehm. 7, 85 (1997)Google Scholar
3. Ohta, H., Seo, W.S., and Koumoto, K., “Thermoelectric properties of homologous compounds in ZnO-In2O3 system”, J. Am. Cream. Soc., 79, 2193 (1996)Google Scholar
4. Malochkin, O., Seo, W.S., and Koumoto, K., “Thermoelectric properties of (ZnO)5In2O3 single crystal grown by a flux method”, Jpn. J. Appl. Phys., 43, L194, (2004)Google Scholar
5. Jonker, G.H., Phillips Res. Rep. 23, 131, (1968)Google Scholar