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Effect of Oxygen Implantation Conditions on Buried Si02 Layer Formation using a Multiple Step Process
Published online by Cambridge University Press: 25 February 2011
Abstract
We have studied the effect of implantation temperature, dose step, and total dose on the buried Si02 layer formed with a multiple low dose oxygen implantation process. Furthermore, we have produced a continuous, high quality buried SiO2 layer about 1500 Å thick with a dose of only 7 × 1017 0+/cm2 at 160 keV. The thin SiO2 layer is important not only because of the possible economic advantages of reduced dose, but also because a thinner oxide layer is more radiation hard.
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