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Effect of Microcavity Structures on the Photoluminescence of Silicon Nanocrystals

Published online by Cambridge University Press:  10 February 2011

Marc G. Spooner ,
Timothy M. Walsh  and
Robert G. Elliman
Marc G. Spooner
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200, Australia.
Timothy M. Walsh
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200, Australia.
Robert G. Elliman
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200, Australia.
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Abstract

ptical microcavity structures containing Si nanocrystals are fabricated by plasma enhanced chemical vapour deposition (PECVD) of SiO2, Si3N4 and SiOx layers. The nanocrystals are formed within Si-rich oxide layers (SiOx) by precipitation and growth, and the microcavity structures defined by two parallel distributed Bragg mirrors (DBM) made from either alternate SiO2/Si3N4 layers or alternate SiO2/SiOx layers. In the latter case, Si nanocrystal layers form part of the DBM structure thereby providing a distributed emission source. The optical emission from these and related structures are examined and compared with that from isolated nanocrystal layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 770: Symposium I – Optoelectronics of Group-IV-Based Materials , 2003 , I1.8
Copyright
Copyright © Materials Research Society 2003

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